Interfacial reactions of cu and in for low-temperature processes
Journal
2019 IEEE 21st Electronics Packaging Technology Conference, EPTC 2019
Pages
435-439
Date Issued
2019
Author(s)
Wang, Y.-W.
Abstract
Process temperature must be reduced to avoid the reliability degradation of 3D IC packages due to thermal damage of temperature-sensitive devices. Low-temperature bonding avoids thermal damages and bonding misalignment. Owing to the ban of lead, the lead-bearing solder has been replaced by lead-free solder. However, the melting point of lead-free solder is higher than lead-bearing solder. During high-temperature reflow process, the large package warpage is caused by the temperature. Requiring the use of a bonding process at low temperature below 200 °C. Low melting point solder can be considered as the interconnect material to reduce processes temperature. In is one of the potential materials because of its low melting point, ductility and anti-corrosion. The In-based solder is a potential candidate to replace Sn-based solder. However, there are only few previous literatures in the reaction between In and metallizations. It is of outmost important to realize the microstructure evolution of In-based solder. The interfacial reactions between In and Cu is studied by means of SEM, FIB, FE-EPMA and Nanoindention in this study.
Type
conference paper