Self-aligned inversion-channel In0.75Ga0.25As MOSFETs using MBE-Al2O3/Ga2O3(Gd 2O3) and ALD-Al2O3 as gate dielectrics
Journal
39th European Solid-State Device Research Conference
Pages
399-402
Date Issued
2009
Author(s)
Abstract
High-performance self-aligned inversion-channel In 0.75 Ga 0.25 As n-MOSFETs using in-situ ultra-high-vacuum (UHV) deposited Al 2 O 3 /Ga 2 O 3 (Gd 2 O 3 ) and ex-situ atomic-layer-deposited (ALD) Al 2 O 3 as gate dielectrics have been fabricated. Both devices exhibit excellent DC characteristics, including high drain currents and transconductances. A 1.2 mum-gate-length In 0.75 Ga 0.25 As MOSFET using Al 2 O 3 (2 nm-thick)/GGO(13 nm-thick) dual-layer gate dielectric demonstrated a maximum drain current of 970 muA/mum, a peak transconductance of 410 muS/mum, and a peak mobility of 1560 cm 2 /Vmiddots. A maximum drain current of 194 muA/mum and a peak transconductance of 126 muS/mum were exhibited by a 2 mum-gate-length In 0.75 Ga 0.25 As MOSFET using ALD-Al 2 O 3 (6 nm-thick).
Type
conference paper