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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Incorporation of group V elements in Ga<inf>x</inf>In<inf>1-x</inf>As<inf>y</inf>P<inf>1-y</inf> grown by gas source molecular beam epitaxy
Details
Incorporation of group V elements in GaxIn1-xAsyP1-y grown by gas source molecular beam epitaxy
Journal
Journal of Electronic Materials
Journal Volume
25
Journal Issue
9
Pages
1469-1473
Date Issued
1996
Author(s)
Lee, T.-L.
Liu, J.-S.
HAO-HSIUNG LIN
DOI
10.1007/BF02655385
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/500382
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-0004669190&doi=10.1007%2fBF02655385&partnerID=40&md5=53d05c5b5775049e5a7faa40baea2d9f
Type
journal article