https://scholars.lib.ntu.edu.tw/handle/123456789/148091
標題: | Reduction in Leakage Current of Low-Temperature Thin-Gate Oxide by Repeated Spike Oxidation Technique | 作者: | Hong, Chao-Chi Chang, Chang-Yun Lee, Chaung-Yuan Hwu, Jenn-Gwo |
關鍵字: | Leakage current density;low temperature oxidation;MOS device;repeated spike oxidation | 公開日期: | 一月-2002 | 出版社: | Taipei:National Taiwan University Dept Mech Engn | 卷: | VOL. 23 | 期: | NO. 1 | 起(迄)頁: | - | 來源出版物: | IEEE ELECTRON DEVICE LETTERS | 摘要: | A novel repeated spike oxidation (RSO) technique had been used to grow low-temperature thin-gate oxide. Around the similar effective oxide thickness extracted from the capacitance- voltage (C–V) curves under quantum mechanical effect consideration, the leakage currents of RSO samples were near one order of magnitude lower than those of typical ones. Flat band voltage shift or electron trapping in RSO oxides during current-voltage (I–V) measurement had not been observed. The reduction of interface state densities and the improvement in oxide uniformity would be the possible reasons for the reduction in leakage currents of RSO samples. |
URI: | http://ntur.lib.ntu.edu.tw//handle/246246/200611150121582 | 其他識別: | 246246/200611150121582 |
顯示於: | 電機工程學系 |
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