DC 欄位 | 值 | 語言 |
dc.contributor | Dept. of Electr. Eng., National Taiwan Univ. | en |
dc.contributor.author | Kuo, J.B. | en |
dc.contributor.author | Sun, E.C. | en |
dc.contributor.author | Lin, M.T. | en |
dc.contributor.author | KuoJB | - |
dc.creator | Kuo, J.B.; Sun, E.C.; Lin, M.T.Kuojb | - |
dc.date | 2003-11 | en |
dc.date.accessioned | 2007-04-19T03:24:09Z | - |
dc.date.accessioned | 2018-07-06T09:47:54Z | - |
dc.date.available | 2007-04-19T03:24:09Z | - |
dc.date.available | 2018-07-06T09:47:54Z | - |
dc.date.issued | 2003-11 | - |
dc.identifier | N/A | en |
dc.identifier.uri | http://ntur.lib.ntu.edu.tw//handle/246246/200704191002917 | - |
dc.format | application/pdf | en |
dc.format.extent | 356400 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.language | en-US | en |
dc.language.iso | en_US | - |
dc.relation | Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003. The 11th IEEE International Symposium on | en |
dc.relation.ispartof | The 11th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003. | - |
dc.title | Analysis of gate misalignment effect on the threshold voltage of double-gate (DG) ultrathin fully-depleted (FD) silicon-on-insulator (SOI) NMOS devices using a compact model considering fringing electric field effect | en |
dc.type | journal article | en |
dc.identifier.doi | 10.1109/EDMO.2003.1259988 | en |
dc.relation.pages | - | - |
dc.identifier.uri.fulltext | http://ntur.lib.ntu.edu.tw/bitstream/246246/200704191002917/1/01259988.pdf | - |
item.languageiso639-1 | en_US | - |
item.cerifentitytype | Publications | - |
item.fulltext | with fulltext | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.openairetype | journal article | - |
item.grantfulltext | open | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
顯示於: | 電機工程學系
|