https://scholars.lib.ntu.edu.tw/handle/123456789/148157
Title: | Analysis of gate misalignment effect on the threshold voltage of double-gate (DG) ultrathin fully-depleted (FD) silicon-on-insulator (SOI) NMOS devices using a compact model considering fringing electric field effect | Authors: | Kuo, J.B. Sun, E.C. Lin, M.T. KuoJB |
Issue Date: | Nov-2003 | Start page/Pages: | - | Source: | The 11th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003. | URI: | http://ntur.lib.ntu.edu.tw//handle/246246/200704191002917 | Other Identifiers: | N/A | DOI: | 10.1109/EDMO.2003.1259988 |
Appears in Collections: | 電機工程學系 |
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01259988.pdf | 348.05 kB | Adobe PDF | View/Open |
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