https://scholars.lib.ntu.edu.tw/handle/123456789/154187
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Wu, Chung Cheng | en |
dc.contributor.author | Lee, Si-Chen | en |
dc.contributor.author | Lin, Hao-Hsiung | en |
dc.creator | Wu, Chung Cheng;Lin, Hao-Hsiung;Lee, Si-Chen | - |
dc.date.accessioned | 2009-02-04T12:41:48Z | - |
dc.date.accessioned | 2018-07-06T15:09:50Z | - |
dc.date.available | 2009-02-04T12:41:48Z | - |
dc.date.available | 2018-07-06T15:09:50Z | - |
dc.date.issued | 1992 | - |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0026854360&doi=10.1143%2fJJAP.31.L385&partnerID=40&md5=40ec11c6d3b29c1b48a3d167c98808a4 | - |
dc.description.abstract | The behavior of surface recombination current in AlGaAs/GaAs heterojunction bipolar transistors prepared by molecular beam epitaxy have been investigated. By using compositional grading of the emitter-base junction and emitter edge-thinning design, the 1-kT injection current can be increased whereas the surface recombination current is suppressed at the same time. Consequently, the maximum differential current gain reaches 4200 which, to our knowledge, is the highest reported to date for AlGaAs/GaAs heterojunction bipolar transistors prepared by molecular beam epitaxy. © 1992 IOP Publishing Ltd. | - |
dc.language | en | en |
dc.relation.ispartof | Japanese Journal of Applied Physics | en_US |
dc.subject | Algaas GaAs; Emitter edge-thinning; Heterojunction bipolar transistor; Junction grading; Surface recombination | - |
dc.subject.other | Molecular Beam Epitaxy; Semiconducting Aluminum Compounds; Semiconducting Gallium Arsenide; Surface Recombination; Transistors, Bipolar | - |
dc.title | High Gain Npn AlGaAs/GaAs Heterojunction Bipolar Transistors Prepared by Molecular Beam Epitaxy | - |
dc.type | journal article | en |
dc.identifier.doi | 10.1143/JJAP.31.L385 | - |
dc.identifier.scopus | 2-s2.0-0026854360 | - |
item.fulltext | no fulltext | - |
item.grantfulltext | none | - |
dc.relation.pages | L385-L387 | - |
dc.relation.journalvolume | 31 | - |
dc.relation.journalissue | 4 | - |
item.openairetype | journal article | - |
item.cerifentitytype | Publications | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.fulltext | no fulltext | - |
item.grantfulltext | none | - |
crisitem.author.dept | Photonics and Optoelectronics | - |
crisitem.author.dept | Electronics Engineering | - |
crisitem.author.dept | TSMC-NTU Joint Research Center | - |
crisitem.author.dept | Photonics and Optoelectronics | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.dept | Electronics Engineering | - |
crisitem.author.orcid | 0000-0002-3788-2030 | - |
crisitem.author.orcid | 0000-0003-3408-6538 | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | Others: University-Level Research Centers | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
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