https://scholars.lib.ntu.edu.tw/handle/123456789/154187
標題: | High Gain Npn AlGaAs/GaAs Heterojunction Bipolar Transistors Prepared by Molecular Beam Epitaxy | 作者: | Wu, Chung Cheng Lee, Si-Chen Lin, Hao-Hsiung |
關鍵字: | Algaas GaAs; Emitter edge-thinning; Heterojunction bipolar transistor; Junction grading; Surface recombination | 公開日期: | 1992 | 卷: | 31 | 期: | 4 | 起(迄)頁: | L385-L387 | 來源出版物: | Japanese Journal of Applied Physics | 摘要: | The behavior of surface recombination current in AlGaAs/GaAs heterojunction bipolar transistors prepared by molecular beam epitaxy have been investigated. By using compositional grading of the emitter-base junction and emitter edge-thinning design, the 1-kT injection current can be increased whereas the surface recombination current is suppressed at the same time. Consequently, the maximum differential current gain reaches 4200 which, to our knowledge, is the highest reported to date for AlGaAs/GaAs heterojunction bipolar transistors prepared by molecular beam epitaxy. © 1992 IOP Publishing Ltd. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0026854360&doi=10.1143%2fJJAP.31.L385&partnerID=40&md5=40ec11c6d3b29c1b48a3d167c98808a4 | DOI: | 10.1143/JJAP.31.L385 | SDG/關鍵字: | Molecular Beam Epitaxy; Semiconducting Aluminum Compounds; Semiconducting Gallium Arsenide; Surface Recombination; Transistors, Bipolar |
顯示於: | 電機工程學系 |
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