https://scholars.lib.ntu.edu.tw/handle/123456789/155613
標題: | Carrier lifetime measurement on electroluminescent metal–oxide–silicon tunneling diodes | 作者: | MIIN-JANG CHEN CHING-FUH LIN Lee, M. H. Chang, S. T. CHEE-WEE LIU |
公開日期: | 2001 | 卷: | 79 | 期: | 14 | 起(迄)頁: | 2264-2266 | 來源出版物: | Applied Physics Letters | 摘要: | The temporal response of the electroluminescence at the Si band gap energy from a metal-oxide-silicon (MOS) tunneling diode is used to characterize the minority carrier lifetime near the Si/SiO2 interface. The temporal responses reveal that the Shockley-Read-Hall (SRH) recombination lifetimes are 18 and 25.8 μs for the rising and falling edges, respectively, and that the ratio for SRH, radiative, and Auger recombinations is 1:0.196:0.096 at injection current density of 39 A/cm2. The investigation shows that the electroluminescence of the MOS tunneling diode can be significantly increased by reducing the number of the nonradiative recombination centers. © 2001 American Institute of Physics. |
URI: | http://ntur.lib.ntu.edu.tw//handle/246246/145923 https://www.scopus.com/inward/record.uri?eid=2-s2.0-0035475479&doi=10.1063%2f1.1405429&partnerID=40&md5=3bddbdb9e34a03bb85784b7f4f336542 |
ISSN: | 00036951 | DOI: | 10.1063/1.1405429 |
顯示於: | 電機工程學系 |
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