https://scholars.lib.ntu.edu.tw/handle/123456789/304330
Title: | Annealing effects on the interfacial properties of GaN MOS prepared by photo-enhanced wet oxidation | Authors: | H.-M. Wu J.-Y. Lin L.-H. Peng C.-M. Lee J.-I. Chyi E. Chen LUNG-HAN PENG |
Issue Date: | Dec-2003 | Source: | International Semiconductor Device Research Symposium (ISDRS’03) | URI: | http://scholars.lib.ntu.edu.tw/handle/123456789/304330 | DOI: | 10.1109/ISDRS.2003.1272156 |
Appears in Collections: | 光電工程學研究所 |
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01272156.pdf | 137.94 kB | Adobe PDF | View/Open |
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