https://scholars.lib.ntu.edu.tw/handle/123456789/307554
標題: | Effect of starting oxide preparation on electrical properties of reoxidized nitrided and N2O-annealed gate oxides | 作者: | JENN-GWO HWU | 公開日期: | 1994 | 卷: | 33 | 期: | 9 A | 起(迄)頁: | 5101-5106 | 來源出版物: | Japanese Journal of Applied Physics, Part 1: Regular Papers \\& Short Notes \\& Review Papers | 摘要: | In this work, the effect of the starting oxides with and without postoxidation annealing on the reoxidized nitrided gate oxides (RNO) and N2O-annealed oxides (NAO) of metal-oxide-semiconductor (MOS) structures is discussed. It is found that both the radiation hardness and the constant-current stress resisitance can be improved if the starting oxides of the RNO and NAO are prepared without postoxidation annealing (i.e., fast pull-out from the furnace after the oxidation is completed). The improvements are related to the excess oxygen existing in the fast- pull-out oxides, which results in higher nitrogen incorporation in the oxide and reduces the strain gradient near the oxide interface. © 1994 IOP Publishing Ltd. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0028507995&doi=10.1143%2fJJAP.33.5101&partnerID=40&md5=ad0a00a8e77a05bb4d8a8c9591f6afb7 http://scholars.lib.ntu.edu.tw/handle/123456789/307554 |
DOI: | 10.1143/JJAP.33.5101 | SDG/關鍵字: | Constant-current stress resistance; MOS structure; N20 annealing; Postoxidation treatment; Radiation hardness; Reoxidized nitrided oxide |
顯示於: | 電機工程學系 |
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