https://scholars.lib.ntu.edu.tw/handle/123456789/340132
Title: | Sub-nanometer EOT scaling on In 0.53 Ga 0.47 As with atomic layer deposited HfO 2 as gate dielectric | Authors: | Lee, KY Chang, P Chang, YC Huang, ML Lee, YJ MINGHWEI HONG Kwo, J |
Issue Date: | 2008 | Source: | 2008 International Symposium on VLSI Technology, Systems and Applications | URI: | http://scholars.lib.ntu.edu.tw/handle/123456789/340132 |
Appears in Collections: | 應用物理研究所 |
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