https://scholars.lib.ntu.edu.tw/handle/123456789/342558
Title: | Breakdown Behavior of 40-nm PD-SOI NMOS Device Considering STI-Induced Mechanical Stress Effect | Authors: | I. S. Lin V. C. Su D. Chen C. S. Yeh C. T. Tsai M. Ma JAMES-B KUO |
Issue Date: | Jun-2008 | Journal Volume: | 29 | Journal Issue: | 6 | Start page/Pages: | 612-614 | Source: | IEEE Electron Device Letters | Abstract: | This letter reports the shallow-trench-isolation (STI)-induced mechanical-stress-related breakdown behavior of the 40-nm PD-SOI NMOS device. As verified by the experimentally measured data and the 2-D simulation results, breakdown occurs at a higher drain voltage for the device with a smaller S/D length of 0.17 μ due to the weaker function of the parasitic bipolar device, which is offset by the stronger impact ionization in the post-pinchoff region coming from the bandgap narrowing generated by the STI-induced mechanical stress. © 2008 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-44849106021&doi=10.1109%2fLED.2008.922971&partnerID=40&md5=40004d8b14bb16c18d2f958c42924b71 | DOI: | 10.1109/LED.2008.922971 |
Appears in Collections: | 電機工程學系 |
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