https://scholars.lib.ntu.edu.tw/handle/123456789/347708
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Fu, S.-L. | en_US |
dc.contributor.author | JENN-GWO HWU | en_US |
dc.creator | Hwu, J.-G.;Fu, S.-L. | - |
dc.date.accessioned | 2018-09-10T07:29:09Z | - |
dc.date.available | 2018-09-10T07:29:09Z | - |
dc.date.issued | 1989 | - |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0024719143&doi=10.1016%2f0038-1101%2889%2990139-1&partnerID=40&md5=ff9a0e0ab363133f920d0ba3817dc4ba | - |
dc.identifier.uri | http://scholars.lib.ntu.edu.tw/handle/123456789/347708 | - |
dc.description.abstract | It was experimentally observed that MOS devices prepared by repeated irradiation-then-anneal treatments were more radiation hard than those without such treatments. A modified isochronal annealing method based on the newly reported flat-band-condition annealing approximation was used in this work to examine the activation energy distribution of the radiation-induced positive charges. It was found that an MOS device after X-ray irradiation with a dose rate of 200 k rads (SiO2)/min for 5 min exhibited a distribution of activation energy ranging from 1.2 to 1.8 eV. A sample which was subjected to a repeated irradiation-then-anneal treatments exhibited a significant reduction in the distribution of activation energy in the low energy region of 1.2-1.5 eV, but not in the high energy region of 1.5-1.8 eV. The activation energy distribution for samples prepared under various postoxidation treatments are discussed. © 1989. | - |
dc.language | en | en |
dc.relation.ispartof | Solid State Electronics | en_US |
dc.source | AH | - |
dc.subject.other | Heat Treatment--Annealing; Oxides--Radiation Effects; Semiconductor Materials--Radiation Effects; Activation Energy Distribution; Irradiation-Then-Anneal Treatments; Isochronal Annealing; Radiation Hardness; Semiconductor Devices, MOS | - |
dc.title | Improvement in radiation hardness of oxide by successive irradiation-then-anneal treatments | - |
dc.type | journal article | en |
dc.identifier.doi | 10.1016/0038-1101(89)90139-1 | - |
dc.identifier.scopus | 2-s2.0-0024719143 | - |
dc.relation.pages | 615-621 | - |
dc.relation.journalvolume | 32 | - |
dc.relation.journalissue | 8 | - |
item.cerifentitytype | Publications | - |
item.openairetype | journal article | - |
item.fulltext | no fulltext | - |
item.grantfulltext | none | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.dept | Electronics Engineering | - |
crisitem.author.orcid | 0000-0001-9688-0812 | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
顯示於: | 電機工程學系 |
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