https://scholars.lib.ntu.edu.tw/handle/123456789/356362
Title: | Edge field enhanced deep depletion phenomenon in MOS structures with ultra-thin gate oxides | Authors: | Cheng, J.-Y. Lu, H.-T. Yang, C.-Y. Hwu, J.-G. JENN-GWO HWU |
Issue Date: | 2010 | Start page/Pages: | 844-846 | Source: | ICSICT-2010 -10th IEEE International Conference on Solid-State and Integrated Circuit Technology | URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-78751524776&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/356362 |
DOI: | 10.1109/ICSICT.2010.5667446 |
Appears in Collections: | 電機工程學系 |
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