https://scholars.lib.ntu.edu.tw/handle/123456789/387117
標題: | Performance improvement of a triple-junction GaAs-based solar cell using a SiO<inf>2</inf>-nanopillar/SiO<inf>2</inf>/TiO<inf>2</inf> graded-index antireflection coating | 作者: | Liu, J.-J. Ho, W.-J. Syu, J.-K. Lee, Y.-Y. Lin, C.-F. Shiao, H.-P. CHING-FUH LIN |
關鍵字: | Current matching; External quantum efficiency; Graded-index antireflection coating; Triple-junction solar cell | 公開日期: | 2014 | 卷: | 11 | 期: | 1-4 | 起(迄)頁: | 311-321 | 來源出版物: | International Journal of Nanotechnology | 摘要: | In this study, the enhanced performance of a triple-junction GaAs-based solar cell using a SiO2-nanopillar/SiO2/TiO2 graded-index antireflection coating (GI-ARC) was demonstrated. The optical reflectance, photovoltaic current-voltage (I-V), and external quantum efficiency (EQE) of a cell with a SiO2/TiO2 double-layer (DL) ARC and a cell with a GI-ARC were measured and compared. The cell with a GI-ARC exhibited the lowest optical reflectance. Thus, the average EQE enhancements (?EQE) of the cell with a GI-ARC compared to the cell with a DL-ARC were 5.88% for the top cell and -1.56% for the middle cell. In addition, a small difference in the photocurrent generated between the top cell and the middle cell was achieved. Finally, an additional 0.52% increase (from 24.99% to 25.51%) in conversion efficiency was obtained. Copyright © 2014 Inderscience Enterprises Ltd. |
URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-84899013557&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/387117 |
DOI: | 10.1504/IJNT.2014.059832 | SDG/關鍵字: | Antireflection coatings; Efficiency; Gallium arsenide; III-V semiconductors; Nanopillars; Reflection; Semiconducting gallium; Silica; Solar cells; Current matching; Double layers; External quantum efficiency; Graded index; Optical reflectance; Photovoltaic currents; Triple junction; Triple junction solar cells; Quantum efficiency |
顯示於: | 電機工程學系 |
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