https://scholars.lib.ntu.edu.tw/handle/123456789/393212
Title: | In-situ doped and tensily stained ge junctionless gate-all-around nFETs on SOI featuring I<inf>on</inf> = 828 μa/μm, I<inf>on</inf>/I<inf>off</inf> ? 1×10<sup>5</sup>, DIBL= 16-54 mV/V, and 1.4X external strain enhancement | Authors: | CHEE-WEE LIU Wong, I.-H. Chen, Y.-T. Huang, S.-H. Tu, W.-H. Chen, Y.-S. Shieh, T.-C. Lin, T.-Y. Lan, H.-S. CHEE-WEE LIU |
Issue Date: | 2015 | Journal Volume: | 2015-February | Journal Issue: | February | Start page/Pages: | 9.6.1-9.6.4 | Source: | International Electron Devices Meeting, IEDM | URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-84938247608&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/393212 |
DOI: | 10.1109/IEDM.2014.7047019 |
Appears in Collections: | 電機工程學系 |
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