https://scholars.lib.ntu.edu.tw/handle/123456789/404521
Title: | A novel technique to fabricate 28 nm p-MOSFETs possessing gate oxide integrity on an embedded SiGe channel without silicon surface passivation | Authors: | M. H.Liao M. H. Yu T. C. Huang L. T. Wang T. L. Lee S. M. Jang H. C.Cheng |
Issue Date: | 2012 | Start page/Pages: | 495102 | Source: | Journal of Physics D: Applied Physics | URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/404521 |
Appears in Collections: | 電機工程學系 |
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