https://scholars.lib.ntu.edu.tw/handle/123456789/428055
Title: | High Performance MoS2 TFT using Graphene Contact First Process | Authors: | C. S. Chang Chien H. M. Chang W. T. Lee M. R. Tang CHAO-HSIN WU SI-CHEN LEE |
Issue Date: | 2017 | Journal Volume: | 7 | Journal Issue: | 8 | Start page/Pages: | 1579-1598 | Source: | AIP Advance | Abstract: | An ohmic contact of graphene/MoS2 heterostructure is determined by using ultraviolet photoelectron spectroscopy (UPS). Since graphene shows a great potential to replace metal contact, a direct comparison of Cr/Au contact and graphene contact on the MoS2 thin film transistor (TFT) is made. Different from metal contacts, the work function of graphene can be modulated. As a result, the subthreshold swing can be improved. And when Vg |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/428055 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85028607129&doi=10.1063%2f1.4996136&partnerID=40&md5=0212259a1b75fd0bb9ead0b43ac2732e |
ISSN: | 21583226 | DOI: | 10.1063/1.4996136 | SDG/Keyword: | Field effect transistors; Graphene; Ohmic contacts; Processing; Thin film transistors; Ultraviolet photoelectron spectroscopy; Graphene contacts; High mobility; High processing temperatures; Metal contacts; Off current; ON/OFF current ratio; P-type; Subthreshold swing; Graphene transistors |
Appears in Collections: | 電機工程學系 |
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