Eliminating Voids at Al 2 O 3 -Cu Interface During Direct Bonding
Journal
International Journal of Applied Ceramic Technology
Journal Volume
12
Journal Issue
5
Pages
1020-1026
Date Issued
2015
Author(s)
Abstract
Direct bonding copper technique employs a eutectic liquid from C u– O system to bond copper to alumina. Many semispherical voids are found at the A l 2 O 3 – C u interface after bonding. Both the amount and the size of voids increase with the increase of oxygen content in copper. The void formation is resulted from the reduction of C u 2 O precipitates during bonding. Based on this observation, an approach to prevent the formation of voids is proposed. The approach introduces a sacrificial coating onto A l 2 O 3 substrate before bonding. The coating consumes the oxygen from the reduction, and the amount of voids is then reduced significantly.
SDGs
Type
journal article