https://scholars.lib.ntu.edu.tw/handle/123456789/497384
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chang, K.W. | en_US |
dc.contributor.author | Lo, D.C.W. | en_US |
dc.contributor.author | Tan, K.L. | en_US |
dc.contributor.author | Streit, D. | en_US |
dc.contributor.author | Dow, G.S. | en_US |
dc.contributor.author | Allen, B.R. | en_US |
dc.contributor.author | HUEI WANG | en_US |
dc.creator | Wang, H.;Chang, K.W.;Lo, D.C.W.;Tan, K.L.;Streit, D.;Dow, G.S.;Allen, B.R. | - |
dc.date.accessioned | 2020-06-04T07:53:31Z | - |
dc.date.available | 2020-06-04T07:53:31Z | - |
dc.date.issued | 1994 | - |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0027814113&partnerID=40&md5=a6c637abcbb8e88e15c8c582f31d3036 | - |
dc.description.abstract | A monolithic 23.5 to 94 GHz frequency quadrupler based on 0.1 μm pseudomorphic AlGaAs/lnGaAs/GaAs high electron mobility transistor technology has been developed. This frequency quadrupler consists of a 23.5 to 47 GHz doubler, a 47 to 94 GHz doubler, and a 47 GHz buffer amplifier between the two doublers. It exhibits a measured conversion loss of 5-7 dB at the output frequency from 94 to 98 GHz. To our knowledge, this is the first reported W-band (75-110 GHz) monolithic frequency quadrupler using HEMT technology. It can be integrated with 23.5 GHz VCOs to construct low phase noise and stable frequency sources around 94 GHz. © 1993 Institute of Electrical and Electronics Engineers Inc.. All rights reserved. | - |
dc.relation.ispartof | IEEE Microwave and Guided Wave Letters | - |
dc.subject.other | Aluminum gallium arsenide; Gallium compounds; Electron transport properties; Frequency multiplying circuits; Gallium compounds; Mathematical models; Oscillators (electronic); AlGaAs/InGaAs/GaAs; Conversion loss; Doublers; GaAs HEMT; GHz frequencies; High electron-mobility transistors; Low-phase-noise; Monolithics; Output frequency; W bands; High electron mobility transistors; Field effect transistors; Electron mobility; Frequency quadrupler; Pseudomorphic technology | - |
dc.title | Monolithic 23.5 to 94 GHz Frequency Quadrupler Using 0.1 Pseudomorphic μm AlGaAs/InGaAs/GaAs HEMT Technology | en_US |
dc.type | journal article | en |
dc.identifier.doi | 10.1109/75.275586 | - |
dc.identifier.scopus | 2-s2.0-0028385454 | - |
dc.relation.pages | 77-79 | - |
dc.relation.journalvolume | 4 | - |
dc.relation.journalissue | 3 | - |
item.fulltext | no fulltext | - |
item.openairetype | journal article | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.grantfulltext | none | - |
item.cerifentitytype | Publications | - |
crisitem.author.dept | Communication Engineering | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.orcid | 0000-0002-9903-1979 | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
顯示於: | 電機工程學系 |
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