https://scholars.lib.ntu.edu.tw/handle/123456789/498760
標題: | Integral and fractional charge filling in a InAs/GaAs quantum dot p-i-n diode by capacitance-voltage measurement | 作者: | Tang, S.-F. Lin, S.-Y. SI-CHEN LEE Cherng, Y.-T. |
關鍵字: | The temperature-dependent capacitance-voltage (C-V) characteristics of two stacked InAs/GaAs quantum dot p-i-n diode were investigated. The capacitance discontinuities observed are attributed to charge storage in the InAs quantum dots. The average storage electrons at each InAs quantum dot thus obtained are two and three electrons at room temperature and at temperature below 100 K, respectively. In the intermediate temperature range from 100 to 250 K, fractional charge occupation is observed in each dot. When the C-V measurement frequency is lowered from 800 to 80 kHz, the capacitance turns into a negative value under low biases which indicates the dominance of the inductance at lower frequency. © 2002 American Institute of Physics. | 公開日期: | 2002 | 卷: | 91 | 期: | 10 I | 起(迄)頁: | 6700-6703 | 來源出版物: | Journal of Applied Physics | URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/498760 https://www.scopus.com/inward/record.uri?eid=2-s2.0-0037094923&doi=10.1063%2f1.1467961&partnerID=40&md5=d5c5e9d19c3a2e29aa634a4995f56745 |
ISSN: | 00218979 | DOI: | 10.1063/1.1467961 | SDG/關鍵字: | C-V measurement; Capacitance voltage measurements; Capacitance-voltage characteristics; Charge storage; Fractional charges; InAs quantum dots; InAs/GaAs; Intermediate temperatures; Low bias; Lower frequencies; Negative values; PiN diode; Room temperature; Temperature dependent; Capacitance; Indium arsenide; Semiconductor quantum dots |
顯示於: | 電機工程學系 |
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