https://scholars.lib.ntu.edu.tw/handle/123456789/498762
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chen, S.-D. | en_US |
dc.contributor.author | Chen, Y.-Y. | en_US |
dc.contributor.author | SI-CHEN LEE | - |
dc.creator | Chen, S.-D.;Chen, Y.-Y.;Lee, S.-C. | - |
dc.date.accessioned | 2020-06-11T06:22:56Z | - |
dc.date.available | 2020-06-11T06:22:56Z | - |
dc.date.issued | 2005 | - |
dc.identifier.issn | 00036951 | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/498762 | - |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-24344489072&doi=10.1063%2f1.1929881&partnerID=40&md5=8cf68a1bdac813cd692abea1dc62704e | - |
dc.description.abstract | By introducing a 2-nm-Al0.3Ga0.7As capping layer on the InAs quantum dots, a transverse-electric-(TE) field-enhanced multicolor quantum-dot (QD) infrared photodetector has been achieved. The TE-enhanced peaks are due to the transition from the S-like ground state to the P-like first excited states induced by the strain field effects on the quantum dot. After rapid thermal annealing, the TE dominant peaks can be changed to transverse-magnetic- (TM) field-enhanced and vice versa. This is because the rapid thermal annealing creates defects at the boundary of QDs and their surrounding material, which release the compressive strain within the QDs. © 2005 American Institute of Physics. | - |
dc.relation.ispartof | Applied Physics Letters | - |
dc.subject.other | Ground state; Infrared radiation; Photodetectors; Semiconducting aluminum compounds; Semiconducting gallium compounds; Semiconducting indium compounds; Semiconductor quantum dots; Strain rate; Solid-source; Spin orbit; Strain field; Transverse magnetic field; Electric field effects | - |
dc.title | Transverse-electric-field-enhanced response in InAs/AlGaAs/GaAs quantum-dot infrared photodetectors | en_US |
dc.type | journal article | en |
dc.identifier.doi | 10.1063/1.1929881 | - |
dc.identifier.scopus | 2-s2.0-24344489072 | - |
dc.relation.pages | 1-3 | - |
dc.relation.journalvolume | 86 | - |
dc.relation.journalissue | 25 | - |
item.fulltext | no fulltext | - |
item.openairetype | journal article | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.grantfulltext | none | - |
item.cerifentitytype | Publications | - |
crisitem.author.dept | Photonics and Optoelectronics | - |
crisitem.author.dept | Electronics Engineering | - |
crisitem.author.dept | TSMC-NTU Joint Research Center | - |
crisitem.author.orcid | 0000-0002-3788-2030 | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | Others: University-Level Research Centers | - |
顯示於: | 電機工程學系 |
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