https://scholars.lib.ntu.edu.tw/handle/123456789/498762
Title: | Transverse-electric-field-enhanced response in InAs/AlGaAs/GaAs quantum-dot infrared photodetectors | Authors: | Chen, S.-D. Chen, Y.-Y. SI-CHEN LEE |
Issue Date: | 2005 | Journal Volume: | 86 | Journal Issue: | 25 | Start page/Pages: | 1-3 | Source: | Applied Physics Letters | Abstract: | By introducing a 2-nm-Al0.3Ga0.7As capping layer on the InAs quantum dots, a transverse-electric-(TE) field-enhanced multicolor quantum-dot (QD) infrared photodetector has been achieved. The TE-enhanced peaks are due to the transition from the S-like ground state to the P-like first excited states induced by the strain field effects on the quantum dot. After rapid thermal annealing, the TE dominant peaks can be changed to transverse-magnetic- (TM) field-enhanced and vice versa. This is because the rapid thermal annealing creates defects at the boundary of QDs and their surrounding material, which release the compressive strain within the QDs. © 2005 American Institute of Physics. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/498762 https://www.scopus.com/inward/record.uri?eid=2-s2.0-24344489072&doi=10.1063%2f1.1929881&partnerID=40&md5=8cf68a1bdac813cd692abea1dc62704e |
ISSN: | 00036951 | DOI: | 10.1063/1.1929881 | SDG/Keyword: | Ground state; Infrared radiation; Photodetectors; Semiconducting aluminum compounds; Semiconducting gallium compounds; Semiconducting indium compounds; Semiconductor quantum dots; Strain rate; Solid-source; Spin orbit; Strain field; Transverse magnetic field; Electric field effects |
Appears in Collections: | 電機工程學系 |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.