https://scholars.lib.ntu.edu.tw/handle/123456789/499542
標題: | High drive current and high frequency response of GaN nanowire metal-oxide-semiconductor field-effect transistor | 作者: | Yu, J.-W. Wu, H.-M. LUNG-HAN PENG |
公開日期: | 2010 | 卷: | 7 | 期: | 7-8 | 起(迄)頁: | 1977-1979 | 來源出版物: | Physica Status Solidi (C) Current Topics in Solid State Physics | 會議論文: | 8th International Conference on Nitride Semiconductors, ICNS-8 | 摘要: | We report the techniques of lateral epitaxial growth of horizontally aligned [1102] GaN NWs and the photoenhanced chemical (PEC) oxidation process to enable the registration of crystalline gallium oxide (Ga2O 3)/GaN NWs onto their growth sites over the SiO2/p-Si substrates. This method allows the implementation of top-gate Ga 2O3/GaN NW-metal oxide semi-conductor field effect transistor (MOSFET) using the conventional optical lithography and the metal lift-off procedures. This scheme enables photolithographic fabrication of top-gate Ga2O3/GaN NW-MOSFET of 60 nm dia. and 2 μm gate length. Device parameters with gm of 40 μS, saturation current of 90 μA, and cut-off frequency fT at 22 GHz have been extracted. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/499542 https://www.scopus.com/inward/record.uri?eid=2-s2.0-77955782570&doi=10.1002%2fpssc.200983589&partnerID=40&md5=fa396e9c6dbd9b578e93f51584347888 |
DOI: | 10.1002/pssc.200983589 | SDG/關鍵字: | CVD; Field-effect transistor; GaN; Nanowires; Oxidation CVD; Device parameters; Gallium oxides; GaN; GaN nanowires; Gate length; Growth sites; High drive current; High frequency response; Lateral epitaxial growths; Lift-off procedures; Metal oxides; Metal-oxide-semiconductor field-effect transistor; MOS-FET; Optical lithography; Oxidation process; Photoenhanced; Saturation current; Semi-conductor; Si substrates; Top-gate; Epitaxial growth; Field effect transistors; Frequency response; Gallium alloys; Metallic compounds; MOSFET devices; Nanowires; Oxidation; Photolithography; Semiconductor growth; Silicon compounds; Gallium nitride |
顯示於: | 電機工程學系 |
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