https://scholars.lib.ntu.edu.tw/handle/123456789/516584
標題: | Impact of Work Function Variation, Line-Edge Roughness, and Ferroelectric Properties Variation on Negative Capacitance FETs | 作者: | P.-C. Chiu Y.-C. Lu VITA PI-HO HU |
關鍵字: | ferroelectric properties; Line-edge roughness; negative capacitance FET (NCFET); work function variation | 公開日期: | 2019 | 卷: | 7 | 起(迄)頁: | 287-294 | 來源出版物: | IEEE Journal of the Electron Devices Society | 摘要: | In this paper, the impacts of work function variation (WFV), line-edge roughness (LER), and ferroelectric properties variation on the threshold voltage, subthreshold swing (SS), Ion, and Ioff variations are analyzed comprehensively for negative capacitance ultra-thin body SOI MOSFETs (NCSOI) compared with SOI MOSFETs (SOI). For LER induced threshold voltage variation ( σ Vt), NC-SOI MOSFETs exhibit smaller σ Vt (= 3.8 mV) than the SOI MOSFETs ( σ Vt = 17.6 mV). For analyzing WFV of NC-SOI MOSFETs, two scenarios are considered including (I) same WFV patterns, and (II) different WFV patterns between the external and internal metal gates. Compared with SOI, NC-SOI with scenario (I) exhibits comparable WFV induced σ Vt (= 16.2 mV), and NC-SOI with scenario (II) exhibits larger WFV induced σ Vt (= 28.5 mV). In scenario (II), different WFV patterns between the internal and external gates result in VFE (voltage drop across the ferroelectric layer) variations, which increases the WFV induced σ Vt for NC-SOI. LER dominates energy-delay product variations ( σ EDP), and NC-SOI MOSFETs show smaller σ EDP than SOI MOSFETs. Besides, NC-SOI MOSFETs with thicker ferroelectric layer thickness ( TFE ), larger coercive electric field ( EC), and smaller remnant polarization (P0) show smaller LER induced σ Vt and σ SS. Ferroelectric properties variations show negligible impact on the WFV induced σ Vt and σ SS. © 2013 IEEE. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/516584 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85062696889&doi=10.1109%2fJEDS.2019.2897286&partnerID=40&md5=aab698eb7cce668f5d74e1da1b0ab575 |
ISSN: | 21686734 | DOI: | 10.1109/jeds.2019.2897286 | SDG/關鍵字: | Capacitance; Electric fields; Ferroelectricity; MOSFET devices; Threshold voltage; Work function; Coercive electric field; Ferroelectric property; Function variation; Line Edge Roughness; Negative capacitance; Remnant polarizations; Sub-threshold swing(ss); Threshold voltage variation; Roughness measurement |
顯示於: | 電機工程學系 |
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