https://scholars.lib.ntu.edu.tw/handle/123456789/580593
標題: | Zinc-induced mirror disordering for high-speed 850 nm VCSEL operated at 40 Gb/s OOK | 作者: | Peng C.-Y Wu C.-H Leong S.-F CHAO-HSIN WU |
關鍵字: | Amplitude shift keying; Bandwidth; Electric resistance; Laser mirrors; Semiconductor device manufacture; Transceivers; Zinc; 3 dB bandwidth; 40 Gb/s; 40-Gbps; High Speed; Optical band width; Series resistances; Threshold currents; Surface emitting lasers | 公開日期: | 2018 | 來源出版物: | CS MANTECH 2018 - 2018 International Conference on Compound Semiconductor Manufacturing Technology | 摘要: | Through the zinc-induced disordering of mirror resistance, vertical-cavity surface-emitting lasers (VCSEL) with 22.5 GHz optical 3dB bandwidth and 40 Gbps on-off-key (OOK) transmission are successfully achieved. VCSELs exhibit lower threshold current and higher optical bandwidth after applying 1.5 m depth of zinc-induced disordering. With 20-ohm series-resistance reduction, the maximum optical bandwidth can be effectively improved from 19.7 to 22.5 GHz. In addition, the threshold current can be simultaneously reduced from 0.29 to 0.22 mA. ? 2018 GaAs Mantech Incorporated. All Rights Reserved. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85050015905&partnerID=40&md5=ea800fd8ff7a3d4495b5122798c36c44 https://scholars.lib.ntu.edu.tw/handle/123456789/580593 |
顯示於: | 電機工程學系 |
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