https://scholars.lib.ntu.edu.tw/handle/123456789/580624
Title: | Fractional Quantum Hall Effect in SiGe/Si/SiGe Quantum Wells in Weak Quantizing Magnetic Fields | Authors: | Dolgopolov V.T Melnikov M.Y Shashkin A.A Huang S.-H Liu C.W Kravchenko S.V. CHEE-WEE LIU |
Issue Date: | 2018 | Journal Volume: | 107 | Journal Issue: | 12 | Start page/Pages: | 794-797 | Source: | JETP Letters | Abstract: | We have experimentally studied the fractional quantum Hall effect in SiGe/Si/SiGe quantum wells in relatively weak magnetic fields, where the Coulomb interaction between electrons exceeds the cyclotron splitting by a factor of a few XX. Minima of the longitudinal resistance have been observed corresponding to the quantum Hall effect of composite fermions with quantum numbers p = 1, 2, 3, and 4. Minima with p = 3 disappear in magnetic fields below 7 T, which may be a consequence of the intersection or even merging of the quantum levels of the composite fermions with different orientations of the pseudo-spin, i.e., those belonging to different valleys. We have also observed minima of the longitudinal resistance at filling factors ν = 4/5 and 4/11, which may be due to the formation of the second generation of the composite fermions. ? 2018, Pleiades Publishing, Inc. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85048567066&doi=10.1134%2fS0021364018120019&partnerID=40&md5=908b079cb7c39dd877f655f4aa311f84 https://scholars.lib.ntu.edu.tw/handle/123456789/580624 |
ISSN: | 00213640 | DOI: | 10.1134/S0021364018120019 |
Appears in Collections: | 電機工程學系 |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.