https://scholars.lib.ntu.edu.tw/handle/123456789/580641
標題: | Semiconductor, topological semimetal, indirect semimetal, and topological Dirac semimetal phases of Ge1-xSnx alloys | 作者: | Lan H.-S Chang S.T CHEE-WEE LIU |
公開日期: | 2017 | 卷: | 95 | 期: | 20 | 來源出版物: | Physical Review B | 摘要: | Electronic structures of Ge1-xSnx alloys (0?x?1) are theoretically studied by the nonlocal empirical pseudopotential method. For relaxed Ge1-xSnx, a topological semimetal is found for x>41% with gapless and band inversion at the Γ point, while there is an indirect-direct band-gap transition at x=8.5%. For strained Ge1-xSnx on a Ge substrate, semimetals with a negative indirect band gap appear for x>43%, and the strained Ge1-xSnx on Ge is always an indirect band-gap semiconductor for x<43%. With appropriate biaxial compressive strains, a topological Dirac semimetal is found with band inversion at Γ and one pair of Dirac cones along the [001] direction. ? 2017 American Physical Society. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85024400833&doi=10.1103%2fPhysRevB.95.201201&partnerID=40&md5=f46b96f28a0a23a076b12ccf6c9c0039 https://scholars.lib.ntu.edu.tw/handle/123456789/580641 |
ISSN: | 24699950 | DOI: | 10.1103/PhysRevB.95.201201 |
顯示於: | 電機工程學系 |
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