https://scholars.lib.ntu.edu.tw/handle/123456789/580875
標題: | A 30-40 GHz Continuous Class F-1Power Amplifier with 35.8% Peak PAE in 65 nm CMOS Technology | 作者: | Wang Z.-H Chen C.-N HUEI WANG |
關鍵字: | 5G mobile communication systems; Bandwidth; Bandwidth compression; CMOS integrated circuits; Millimeter waves; Radio waves; 1dB compression point; 65 nm CMOS technologies; Average output power; Large-signal performance; Modulation capability; Power amplifier designs; Root-mean-square errors; Saturated output power (Psat); Power amplifiers | 公開日期: | 2020 | 起(迄)頁: | 178-180 | 來源出版物: | 2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020 | 摘要: | This paper presents a continuous-mode inverse Class-F (i.e., Class-F-1) power amplifier design to achieve both high efficiency and wide bandwidth for 5G communications. The proposed fundamental and harmonic matching is achieved using an output transformer with an embedded capacitor for continuous inverse class-F operation. In this way, we can reduce the harmonic load complexity and insertion loss greatly. Therefore, the proposed inverse Class-F PA shows a saturated output power (Psat) of 17.9 dBm, output power bandwidth (30 to 40 GHz) with 33 % peak PAE, and output 1-dB compression point (OP1dB) of 15.0 dBm at 34 GHz. When tested with a single-carrier 64-QAM signal, this PA achieves bandwidth of 400 MHz, 14.1-dBm average output power, and 22.1% average PAE under root-mean-square (rms) error vector magnitude (EVM)-25.1 dB. Among all the published mm-Wave CMOS PAs, this PA shows outstanding large-signal performances and exceptional modulation capability. ? 2020 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85096619300&doi=10.1109%2fRFIT49453.2020.9226239&partnerID=40&md5=b024c607c4d64e1e1bb0d3048f163782 https://scholars.lib.ntu.edu.tw/handle/123456789/580875 |
DOI: | 10.1109/RFIT49453.2020.9226239 |
顯示於: | 電機工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。