https://scholars.lib.ntu.edu.tw/handle/123456789/580877
標題: | A 38 GHz pre-distortion power amplifier with OP1dB and IM3 improvement in 65-nm CMOS process | 作者: | Lin Y.-T Chen C.-N Lin J.-L HUEI WANG |
關鍵字: | 5G mobile communication systems; Amplitude modulation; CMOS integrated circuits; ACLR; Adjacent channel leakage ratios; Continuous wave measurements; Error vector magnitude; Ka band; Ka-band power amplifier; Linearizers; Neutralization technique; Power amplifiers | 公開日期: | 2019 | 卷: | 2019-December | 起(迄)頁: | 1646-1648 | 來源出版物: | Asia-Pacific Microwave Conference Proceedings, APMC | 摘要: | A Ka-band power amplifier (PA) with linearity enhancement is designed in 65-nm bulk CMOS process. A cold-mode linearizer with additional transmission line is applied to improve OP {1mathrm{dB}} efficiency, 3rd inter-modulation (IM3) distortion and amplitude-to-phase modulation (AM-PM) for 5G communication. By enabling the linearizer, OP {1mathrm{dB}} is increased from 13.2 to 14.2 dBm with 5% PAE1dB improvement, the average output power under-30 dBc IMD {3} is increased from 8.1 to 10.5 dBm for two-carrier continuous wave (CW) measurement, and AM-PM is reduced close to 0° until the OP {1mathrm{dB}} region. In addition, the average output power under-25 dBc error vector magnitude (EVM) is enhanced from 8.2 to 9.4 dBm with 5.2 dB adjacent channel leakage ratio (ACLR) improvement for 1.5 Gb/s 64-QAM. ? 2019 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85082990527&doi=10.1109%2fAPMC46564.2019.9038193&partnerID=40&md5=6b59fc05d77fa496f03e430f4707553c https://scholars.lib.ntu.edu.tw/handle/123456789/580877 |
DOI: | 10.1109/APMC46564.2019.9038193 |
顯示於: | 電機工程學系 |
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