https://scholars.lib.ntu.edu.tw/handle/123456789/607017
標題: | Improvement of p-type AlGaN conductivity with an alternating Mg-doped/un-doped AlGaN layer structure | 作者: | CHIH-CHUNG YANG Chen C.-C Lin Y.-R Lin Y.-W Su Y.-C Chen C.-C Huang T.-C Wu P.-H Yang C.C Mou S Averett K.L. CHIH-CHUNG YANG |
關鍵字: | Alternating-layer structure;Hole mobility;Mg doping;P-type AlGaN;Sheet resistance;Aluminum gallium nitride;Gallium nitride;III-V semiconductors;Molecular beam epitaxy;Semiconductor alloys;Al content;AlGaN layers;Alternating layers;Different layers;Doped layers;Ionized impurity scattering;Layer structures;Mg-doping;Magnesium alloys | 公開日期: | 2021 | 卷: | 12 | 期: | 7 | 來源出版物: | Micromachines | 摘要: | Using molecular beam epitaxy, we prepared seven p-type AlGaN samples of ~25% in Al content, including six samples with Mg-doped/un-doped AlGaN alternating-layer structures of different layer-thickness combinations, for comparing their p-type performances. Lower sheet resistance and higher effective hole mobility are obtained in a layer-structured sample, when compared with the reference sample of uniform Mg doping. The improved p-type performance in a layer-structured sample is attributed to the diffusion of holes generated in an Mg-doped layer into the neighboring un-doped layers, in which hole mobility is significantly higher because of weak ionized impurity scattering. Among the layer-structured samples, that of 6/4 nm in Mg-doped/undoped thickness results in the lowest sheet resistance (the highest effective hole mobility), which is 4.83 times lower (4.57 times higher) when compared with the sample of uniform doping. The effects of the Mg-doped/un-doped layer structure on p-type performance in AlGaN and GaN are compared. ? 2021 by the authors. Licensee MDPI, Basel, Switzerland. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85111357780&doi=10.3390%2fmi12070835&partnerID=40&md5=31082ad396d7e455ffe68b21447eddc6 https://scholars.lib.ntu.edu.tw/handle/123456789/607017 |
ISSN: | 2072666X | DOI: | 10.3390/mi12070835 |
顯示於: | 電機工程學系 |
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