https://scholars.lib.ntu.edu.tw/handle/123456789/607193
標題: | Study of Current Collapse Behaviors of D ual gate AlGaN/GaN HEMTs on Si | 作者: | Lin D Yang J Chang C JIAN-JANG HUANG |
關鍵字: | Current collapse.;Current measurement;Dual-gate structure;Electrodes;GaN;HEMTs;High-electron mobility transistors (HEMTs);Logic gates;MODFETs;Stress;Wide band gap semiconductors;Aluminum gallium nitride;Drain current;Dynamics;Electric current measurement;Electron mobility;Energy gap;Gallium nitride;High electron mobility transistors;III-V semiconductors;Refractory metal compounds;Semiconductor junctions;Current collapse;Dual gates;High electron-mobility transistors;High-electron mobility transistor;On-resistance;Short-pulse;Wide-band-gap semiconductor | 公開日期: | 2021 | 來源出版物: | IEEE Journal of the Electron Devices Society | 摘要: | Surface traps on GaN-based HEMTs (high-electron-mobility transistors) usually result in the increase of channel on-resistance. It becomes worsen when short pulses are applied during high-frequency and high voltage switching. Here we present a dual-gate transistor structure to suppress the dynamic on-resistance increase. The auxiliary gate under a proper fixed voltage is able to induce additional electrons to compensate the channel carrier loss during main gate switching, leading to a lower dynamic on-resistance. In this work, we benchmarked the fundamental electrical properties of both single-gate and dual-gate HEMTs. We further extracted the dynamic electrical properties by stressing the devices with short pulses. The results suggest a significant mitigation of current collapse of a dual-gate HEMT under a proper bias applied on the auxiliary gate electrode. The physical mechanism based on the charge distribution in the channel is employed to explain the observations. Author |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85120923090&doi=10.1109%2fJEDS.2021.3132429&partnerID=40&md5=8cabef4026d566b9a8c5a75f56d504d6 https://scholars.lib.ntu.edu.tw/handle/123456789/607193 |
ISSN: | 21686734 | DOI: | 10.1109/JEDS.2021.3132429 |
顯示於: | 電機工程學系 |
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