https://scholars.lib.ntu.edu.tw/handle/123456789/626182
Title: | Thickness-dependent topological phase transition and Rashba-like preformed topological surface states of α-Sn(001) thin films on InSb(001) | Authors: | Chen K.H.M Lin K.Y Lien S.W Huang S.W CHIA-KUEN CHENG Lin H.Y Hsu C.-H Chang T.-R Cheng C.-M Hong M Kwo J. |
Issue Date: | 2022 | Journal Volume: | 105 | Journal Issue: | 7 | Source: | Physical Review B | Abstract: | Topological materials, possessing spin-momentum locked topological surface states (TSS), have attracted much interest due to their potential applications in spintronics. α-phase Sn (α-Sn), being one of them, displays enriched topological phases via band-gap engineering through a strain or confinement effect. In this work, we investigated the band evolution of in-plane compressively strained α-Sn(001) thin films on InSb(001) in a wide range of thickness from 3 bilayers (BL) to 370 BL by combining angle-resolved photoemission spectra and first-principles calculations. Gapped surface states evolved to a linearly dispersive TSS at a critical thickness of 6 BL, indicating that the system undergoes a phase transition from topologically trivial to nontrivial. For films thicker than 30 BL, additional Rashba-like surface states (RSS) were identified. These RSS served as preformed TSS in another strain-induced topological phase transition. In thick films, 370-BL α-Sn(001), so as to preclude the confinement effect in thin films, our results were consistent with a Dirac semimetal phase with Dirac nodes located along Formula Presented. This thickness-dependent band-structure study deepens our understanding of topological phase transitions and the evolution of Dirac states. Furthermore, the coexistence of TSS and RSS in a Dirac semimetal α-Sn might significantly enhance the potential for spintronic applications. ©2022 American Physical Society |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85124454609&doi=10.1103%2fPhysRevB.105.075109&partnerID=40&md5=23f7ca5802c0140a7661418a09fe5cc4 https://scholars.lib.ntu.edu.tw/handle/123456789/626182 |
ISSN: | 24699950 | DOI: | 10.1103/PhysRevB.105.075109 | SDG/Keyword: | Antimony compounds; Calculations; Energy gap; III-V semiconductors; Indium antimonides; Thick films; Thin films; Topology; Angle-resolved photoemission; Band gap engineering; Bi-layer; Confinement effects; Photoemission spectrum; Spin momentum; Strain effect; Thin-films; Topological materials; Topological phase; Surface states |
Appears in Collections: | 園藝暨景觀學系 |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.