https://scholars.lib.ntu.edu.tw/handle/123456789/631213
標題: | Interfacial-Layer Design for Hf1-xZrxO2-Based FTJ Devices: From Atom to Array | 作者: | Chiang, H. L. Wang, J. F. Lin, K. H. Nien, C. H. Wu, J. J. Hsiang, K. Y. Chuu, C. P. Chen, Y. W. Zhang, X. W. CHEN-WUING LIU Wang, Tahui CHIA-CHUN WANG Lee, M. H. Chang, M. F. Chang, C. S. Chen, T. C. |
公開日期: | 1-一月-2022 | 卷: | 2022-June | 來源出版物: | Digest of Technical Papers - Symposium on VLSI Technology | 摘要: | For the first time, we demonstrate Ferroelectric Tunneling Junctions (FTJs) with both (a) 10-year retention time projected from measured data and (b) robust endurance (> 108 cycles) with the on-off ratio >10× by inserting a 1.8nm Al2O3 interfacial layer (IL) into the FTJs. Compared with Metal-Ferroelectric-Metal (MFM) FTJs, higher orthorhombic phase (-6×) was verified by physical analyses and first-principles calculations in our proposed Metal-Ferroelectric-IL-Metal (MFIM) FTJs, resulting in the remanent polarization (2Pr) which improves the retention and the on-off ratio significantly. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/631213 | ISBN: | 9781665497725 | ISSN: | 07431562 | DOI: | 10.1109/VLSITechnologyandCir46769.2022.9830462 |
顯示於: | 電機工程學系 |
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