Interfacial-Layer Design for Hf1-xZrxO2-Based FTJ Devices: From Atom to Array
Journal
Digest of Technical Papers - Symposium on VLSI Technology
Journal Volume
2022-June
ISBN
9781665497725
Date Issued
2022-01-01
Author(s)
Chiang, H. L.
Wang, J. F.
Lin, K. H.
Nien, C. H.
Wu, J. J.
Hsiang, K. Y.
Chuu, C. P.
Chen, Y. W.
Zhang, X. W.
Wang, Tahui
CHIA-CHUN WANG
Lee, M. H.
Chang, M. F.
Chang, C. S.
Chen, T. C.
Abstract
For the first time, we demonstrate Ferroelectric Tunneling Junctions (FTJs) with both (a) 10-year retention time projected from measured data and (b) robust endurance (> 108 cycles) with the on-off ratio >10× by inserting a 1.8nm Al2O3 interfacial layer (IL) into the FTJs. Compared with Metal-Ferroelectric-Metal (MFM) FTJs, higher orthorhombic phase (-6×) was verified by physical analyses and first-principles calculations in our proposed Metal-Ferroelectric-IL-Metal (MFIM) FTJs, resulting in the remanent polarization (2Pr) which improves the retention and the on-off ratio significantly.
Type
conference paper