https://scholars.lib.ntu.edu.tw/handle/123456789/631447
標題: | Stability and Performance Optimization of 6T SRAM Cell at Cryogenic Temperature | 作者: | Fang, Shao Fu VITA PI-HO HU |
公開日期: | 1-一月-2023 | 來源出版物: | 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023 | 摘要: | Cryogenic on-chip memory is viable for obtaining high-performance computing (HPC) or power reduction. Cryogenic SRAM (Cryo-SRAM) with low threshold voltage (LVT) design at reduced supply voltage (VDD) gets the maximized speed-power gain thanks to the steep subthreshold slope (SS) of cryo-CMOS. However, SRAM with LVT design at 77K may suffer the stability issue. This work demonstrates the optimized threshold voltage design for 6T cryo-SRAM. Compared to the SRAM with LVT design at 77K, the optimized 6T cryo-SRAM cells improve the read and hold static noise margin by 25% and 12%, respectively. Moreover, the optimized 6T cryo-SRAM preserves the speed-power advantages compared to 300K 6T SRAM with standard threshold voltage (SVT) design. The optimized 6T cryo-SRAMs with fast speed and superior stability could be promising candidates for HPC applications. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/631447 | ISBN: | 9798350332520 | DOI: | 10.1109/EDTM55494.2023.10103047 |
顯示於: | 電機工程學系 |
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