An 8kb spin-orbit-torque magnetic random-access memory
Journal
VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings
Date Issued
2021
Author(s)
Chen G.-L
Wang I.-J
Yeh P.-S
Li S.-H
Yang S.-Y
Hsin Y.-C
Wu H.-T
Hsiao H.-M
Chang Y.-J
Chen K.-M
Rahaman S.K.Z
Lee H.-H
Su Y.-H
Chen F.-M
Wei J.-H
Sheu S.-S
Tang D.
Abstract
We'd built 8kb spin-orbit-torque (SOT) MRAM chips to evaluate our cell design and the process recipes to integrate them on CMOS wafer. For the SOT cell, the switching threshold is well correlated to the tungsten channel resistivity. We will show the cell design, integration process to CMOS wafers and the cell properties and array statistics. In this cell and array designs, we show the low switching current capability for the low power application and good thermal stability. © 2021 IEEE.
Other Subjects
CMOS integrated circuits; Integrated circuit design; Magnetic storage; MRAM devices; Spin orbit coupling; VLSI circuits; Array design; Channel resistivity; Integration process; Low power application; Magnetic random access memory; Spin orbits; Switching currents; Switching thresholds; Random access storage
Type
conference paper