https://scholars.lib.ntu.edu.tw/handle/123456789/632200
標題: | Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells | 作者: | Lin C.-Y Huang C.-H Huang S.-H Chang C.-C CHEE-WEE LIU Huang Y.-C Chung H Chang C.-P. |
公開日期: | 2016 | 卷: | 109 | 期: | 9 | 來源出版物: | Applied Physics Letters | 摘要: | Ge/strained GeSn/Ge quantum wells are grown on a 300 mm Si substrate by chemical vapor deposition. The direct bandgap emission from strained GeSn is observed in the photoluminescence spectra and is enhanced by Al2O3/SiO2 passivation due to the field effect. The electroluminescence of the direct bandgap emission of strained GeSn is also observed from the Ni/Al2O3/GeSn metal-insulator-semiconductor tunneling diodes. Electroluminescence is a good indicator of GeSn material quality, since defects in GeSn layers degrade the electroluminescence intensity significantly. At the accumulation bias, the holes in the Ni gate electrode tunnel to the strained n-type GeSn layer through the ultrathin Al2O3 and recombine radiatively with electrons. The emission wavelength of photoluminescence and electroluminescence can be tuned by the Sn content. © 2016 Author(s). |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-84984923990&doi=10.1063%2f1.4961939&partnerID=40&md5=1ed50d25ecac42324689dc03cd6abf03 https://scholars.lib.ntu.edu.tw/handle/123456789/632200 |
ISSN: | 36951 | DOI: | 10.1063/1.4961939 | SDG/關鍵字: | Alumina; Aluminum oxide; Chemical vapor deposition; Electroluminescence; Energy gap; Metal insulator boundaries; MIS devices; Photoluminescence; Refractory metal compounds; Semiconductor alloys; Semiconductor diodes; Semiconductor quantum wells; Band-gap emission; Electroluminescence intensity; Emission wavelength; Field effects; Gate electrodes; Material quality; Metal-insulator-semiconductors; Photoluminescence spectrum; Si-Ge alloys |
顯示於: | 電機工程學系 |
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