https://scholars.lib.ntu.edu.tw/handle/123456789/632222
標題: | Top-gate transistors fabricated on epitaxially grown molybdenum disulfide and graphene hetero-structures | 作者: | Tsai P.-C Huang H.-C Chiang C.-T CHAO-HSIN WU Lin S.-Y. |
公開日期: | 2021 | 卷: | 14 | 期: | 12 | 來源出版物: | Applied Physics Express | 摘要: | We have demonstrated that by using the thermal evaporator, wafer-scale and uniform bi-layer MoS2 can be grown on graphene surfaces without introducing significant damage to the graphene channel. Compared with the top-gate transistors fabricated on standalone graphene films, the field-effect mobility value enhancement from 9.3 to 35.0 cm2 V-1?�s-1 is observed for the device fabricated on the MoS2/graphene hetero-structures, which suggests that the MoS2 layer can act as an efficient passivation layer to the graphene channel. Similar field-effect mobility values obtained for the device with only a mono-layer MoS2 passivation layer are also demonstrated. © 2021 The Japan Society of Applied Physics. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85120802014&doi=10.35848%2f1882-0786%2fac3546&partnerID=40&md5=2f70197984d9b0f3d5070d29d8a8acd8 https://scholars.lib.ntu.edu.tw/handle/123456789/632222 |
ISSN: | 18820778 | DOI: | 10.35848/1882-0786/ac3546 | SDG/關鍵字: | Fabrication; Field effect transistors; Graphene; Graphene transistors; Layered semiconductors; Passivation; Sulfur compounds; Bi-layer; Epitaxially grown; Field-effect mobilities; Gate transistors; Graphene films; Mobility value; Passivation layer; Thermal evaporator; Top gate; Wafer scale; Molybdenum compounds |
顯示於: | 電機工程學系 |
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