https://scholars.lib.ntu.edu.tw/handle/123456789/632491
標題: | Low Noise and High Gain 94 GHz Monolithic InP-Based HEMT Amplifiers | 作者: | HUEI WANG Ton T.N Lai R Lo D.C.W Chen S Streit D Dow G.S Tan K.L Berenz J. |
公開日期: | 1993 | 起(迄)頁: | 239-242 | 來源出版物: | Technical Digest - International Electron Devices Meeting, IEDM | 摘要: | This paper reports the development of low noise and high gain W-band monolithic amplifiers based on 0.1 μm pseudomorphic InAlAs/InGaAs/InP HEMT technology. A one-stage amplifier designed for low noise demonstrates a measured noise figure of 2.6 dB and an associated small signal gain of 7 dB at 96 GHz with a low dc power consumption of 6 mW. Another four-stage amplifier designed for high gain has a small signal gain of 27 ± 2 dB from 80-100 GHz, with a noise figure of about 5 dB and a dc power consumption of 43 mW. To our knowledge] these are the best reported noise figure and gain performance of monolithic amplifiers operating at these frequencies and represent state-of-the-art results. © 1993 IEEE |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0027816549&partnerID=40&md5=73b9ea12f5b320247debe8689e1c3060 https://scholars.lib.ntu.edu.tw/handle/123456789/632491 |
ISSN: | 1631918 | SDG/關鍵字: | Electric power utilization; III-V semiconductors; Indium phosphide; Semiconducting indium phosphide; Field effect transistors; Gain measurement; Gates (transistor); Indium compounds; DC power consumption; High gain; InAlAs/InGaAs/InP; Low-high; Lower noise; Monolithic amplifiers; Monolithics; Noise gain; Small signal gain; W bands; Noise figure; Amplifiers (electronic); Monolithic amplifiers; Noise figure; Pseudomorphic technology |
顯示於: | 電機工程學系 |
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