https://scholars.lib.ntu.edu.tw/handle/123456789/633926
標題: | Low-defect-density WS2 by hydroxide vapor phase deposition | 作者: | Wan, Yi Li, En Yu, Zhihao Huang, Jing-Kai Li, Ming-Yang Chou, Ang-Sheng Lee, Yi-Te Lee, Chien-Ju Hsu, Hung-Chang Zhan, Qin Aljarb, Areej Fu, Jui-Han Chiu, Shao-Pin Wang, Xinran Lin, Juhn-Jong YA-PING CHIU Chang, Wen-Hao Wang, Han Shi, Yumeng Lin, Nian Cheng, Yingchun Tung, Vincent Li, Lain-Jong |
公開日期: | 18-七月-2022 | 卷: | 13 | 期: | 1 | 來源出版物: | Nature communications | 摘要: | Two-dimensional (2D) semiconducting monolayers such as transition metal dichalcogenides (TMDs) are promising channel materials to extend Moore's Law in advanced electronics. Synthetic TMD layers from chemical vapor deposition (CVD) are scalable for fabrication but notorious for their high defect densities. Therefore, innovative endeavors on growth reaction to enhance their quality are urgently needed. Here, we report that the hydroxide W species, an extremely pure vapor phase metal precursor form, is very efficient for sulfurization, leading to about one order of magnitude lower defect density compared to those from conventional CVD methods. The field-effect transistor (FET) devices based on the proposed growth reach a peak electron mobility ~200 cm2/Vs (~800 cm2/Vs) at room temperature (15 K), comparable to those from exfoliated flakes. The FET device with a channel length of 100 nm displays a high on-state current of ~400 µA/µm, encouraging the industrialization of 2D materials. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/633926 | ISSN: | 2041-1723 | DOI: | 10.1038/s41467-022-31886-0 |
顯示於: | 物理學系 |
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