https://scholars.lib.ntu.edu.tw/handle/123456789/636112
Title: | Extremely High-κ Hf<inf>0.2</inf>Zr<inf>0.8</inf>O<inf>2</inf>Gate Stacks Integrated into Ge<inf>0.95</inf>Si<inf>0.05</inf>Nanowire and Nanosheet nFETs Featuring Respective Record Ion per Footprint of 9200μA/μm and Record Ion per Stack of 360μA at V<inf>OV</inf>=V<inf>DS</inf>=0.5V | Authors: | Liu, Yi Chun Chen, Yu Rui Chen, Yun Wen Lin, Hsin Cheng Hsieh, Wan Hsuan Tu, Chien Te Huang, Bo Wei WEI-JEN CHEN Cheng, Chun Yi Chueh, Shee Jier CHEE-WEE LIU |
Issue Date: | 1-Jan-2023 | Journal Volume: | 2023-June | Source: | Digest of Technical Papers - Symposium on VLSI Technology | Abstract: | By taking advantage of the extremely high dielectric constant (κ) of 47, the Hf0.2 Zr0.8O2 gate stacks with ultralow EOT/CET of 0.62 / 0.87 nm are integrated into the 8 stacked high mobility Ge0.95Si0.05 channels with low thermal budget (≤ 450°C) to significantly enhance the IoN. The simulation of κ vs [Zr] in HZO confirms that the κ can be peaked at [Zr]=80 %. The 8 stacked Ge0.95Si0.05 nanowires and nanosheets achieve the record ION per footprint of 9200 μ A / μ m and the record ION per stack of 360 μ A at VOV=VDS=0.5 V, respectively, among all Si / GeSi / Ge 3 D nFETs. Moreover, the significant gate delay improvement by combining the extremely high-κ gate stacks and the large floor number is confirmed by simulation. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/636112 | ISBN: | 9784863488069 | ISSN: | 07431562 | DOI: | 10.23919/VLSITechnologyandCir57934.2023.10185327 |
Appears in Collections: | 電機工程學系 |
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