https://scholars.lib.ntu.edu.tw/handle/123456789/636113
標題: | First Stacked Nanosheet FeFET Featuring Memory Window of 1.8V at Record Low Write Voltage of 2V and Endurance >1E11 Cycles | 作者: | Chen, Yu Rui Liu, Yi Chun Zhao, Zefu Hsieh, Wan Hsuan Lee, Jia Yang Tu, Chien Te Huang, Bo Wei Wang, Jer Fu Chueh, Shee Jier Xing, Yifan Chen, Guan Hua Chou, Hung Chun Woo, Dong Soo Lee, M. H. CHEE-WEE LIU |
公開日期: | 1-一月-2023 | 卷: | 2023-June | 來源出版物: | Digest of Technical Papers - Symposium on VLSI Technology | 摘要: | The large memory window of 1.8V at the low write voltage of 2V is achieved by stacked two nanosheet (NS) gate-allaround (GAA) Ge0.98Si0.02 FeFETs with the channel phosphorus concentration larger than 1E18cm-3, enabling the erase of GAA FeFET. Isotropic wet etching was used in channel release process. Stacked two NSs have the advantages of reducing cell variation and 2X read current. The stable storage with data retention of > 1E4 seconds, linearly extrapolated 10 years, and high endurance > 1E11 cycles are also demonstrated. The thermal budget is as low as 400°C. The stacked NS architecture with high mobility channels makes FeFETs to be compatible with the 2nm node and beyond. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/636113 | ISBN: | 9784863488069 | ISSN: | 07431562 | DOI: | 10.23919/VLSITechnologyandCir57934.2023.10185284 |
顯示於: | 電機工程學系 |
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