https://scholars.lib.ntu.edu.tw/handle/123456789/639888
標題: | Fabrication AlGaN/GaN Fin-HEMTs with Hexagon Nano-scale Fin Channel | 作者: | Lu, Yu Hsuan Chang, Yu Cheng Lu, Wei Ju Lin, Feng Ting Xu, Bo Hsun CHAO-HSIN WU |
關鍵字: | cutoff frequency | Fin-HEMTs | hexagon | maximum oscillation frequency | 公開日期: | 1-一月-2023 | 來源出版物: | 2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023 | 摘要: | This manuscript briefly presents the fabrication and characterization of AlGaN/GaN Fin-High-Electron-Mobility Transistors (Fin-HEMTs). The hexagon nanoscale fin channel was fabricated using TMAH wet etching solution, which reduced the surface roughness and shrunk the fin width (Wfin) to 153nm. The device with fin channel structure exhibits a maximum current density of 1285.01 mA/mm and improved thermal current density reduction from 27% to 13%. Moreover, at a gate bias of 0.5V and a drain bias of 6V, the cutoff frequency (fT) and the maximum oscillation frequency (fmax) are 2.082 GHz and 6.472 GHz, respectively. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/639888 | ISBN: | 9798350337136 | DOI: | 10.1109/WiPDA58524.2023.10382164 |
顯示於: | 電機工程學系 |
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