https://scholars.lib.ntu.edu.tw/handle/123456789/73438
Title: | Charge trapping characteristics of atomic-layer-deposited HfO2 films with Al2O3 as a blocking oxide for high-density non-volatile memory device applications | Authors: | Maikap, S. Lee, H.Y. Wang, T.Y. Tzeng, P.J. Wang, C.C. Lee, L.S. Liu, K.C. Yang, J.R. Tsai, M.J. |
Issue Date: | 2007 | Start page/Pages: | 884-889 | Source: | Semiconductor Science and Technology 22: | URI: | http://ntur.lib.ntu.edu.tw//handle/246246/93241 |
Appears in Collections: | 材料科學與工程學系 |
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