公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2010 | Achieving high-performance Ge MOS devices using high-к gate dielectrics Ga 2 O 3 (Gd 2 O 3) of sub-nm EOT | Chu, LK; Chu, RL; Lin, CA; Lin, TD; Chiang, TH; Kwo, J; MINGHWEI HONG | Device Research Conference 2010 | | | |
2007 | Depletion-mode GaAs-based MOSFET with Ga 2 O 3 (Gd 2 O 3) as a gate dielectric | Tsai, PJ; Chu, LK; Chen, YW; Chiu, YN; Yang, HP; Chang, P; Kwo, J; Chi, J; MINGHWEI HONG | Journal of Crystal Growth | | | |
2005 | Depletion-mode InGaAs/GaAs MOSFET with Oxide Passivated by Amorphous Si | Tsai, PJ; Chiu, UN; Chu, LK; Chen, YW; Yang, HP; Chang, P; Kwo, J; Chi, J; MINGHWEI HONG | 真空科技 | | | |
2011 | Direct determination of flat-band voltage for metal/high $κ$ oxide/semiconductor heterointerfaces by electric-field-induced second-harmonic generation | Chang, C-L; Lee, WC; Chu, LK; MINGHWEI HONG ; Kwo, J; Chang, Y-M | Applied Physics Letters | | | |
2010 | Effective passivation and high-performance metal-oxide-semiconductor devices using ultra-high-vacuum deposited high-$κ$ dielectrics on Ge without interfacial layers | Chu, LK; Chu, RL; Lin, TD; Lee, WC; Lin, CA; Huang, ML; Lee, YJ; Kwo, J; MINGHWEI HONG | Solid-State Electronics | | | |
2011 | Electronic structures of Ga2O3 (Gd2O3) gate dielectric on n-Ge (001) as grown and after CF4 plasma treatment: A synchrotron-radiation photoemission study | Pi, T-W; Lee, WC; Huang, ML; Chu, LK; Lin, TD; Chiang, TH; Wang, YC; Wu, YD; MINGHWEI HONG ; Kwo, J | Journal of Applied Physics | | | |
2009 | Ga2O3 (Gd2O3) on Ge without interfacial layers—energy band parameters and metal oxide semiconductor devices | Chu, LK; Lin, TD; Huang, ML; Chu, RL; Chang, CC; Kwo, J; MINGHWEI HONG | Applied Physics Letters | | | |
2012 | Ge metal-oxide-semiconductor devices with Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectric | Chu, LK; Chiang, TH; Lin, TD; Lee, YJ; Chu, RL; Kwo, J; MINGHWEI HONG | Microelectronic Engineering | | | |
2009 | High performance Ga 2 O 3 (Gd 2 O 3)/Ge MOS devices without interfacial layers | Chu, LK; Chu, RL; Huang, ML; Tung, LT; Lin, TD; Chang, CC; Kwo, J; MINGHWEI HONG | European Solid State Device Research Conference, 2009 | | | |
2010 | High-quality molecular-beam-epitaxy-grown Ga2O3 „Gd2O3… on Ge „100…: Electrical and chemical characterizations | Chu, RL; Lin, TD; Chu, LK; Huang, ML; Chang, CC; MINGHWEI HONG ; Lin, CA; Kwo, J | J. Vacuum Science and Technology B | | | |
2011 | High-resolution core-level photoemission study of CF ${$sub 4$}$-treated Gd ${$sub 2$}$ O ${$sub 3$}$(Ga ${$sub 2$}$ O ${$sub 3$}$) gate dielectric on Ge probed by synchrotron radiation | Pi, T-W; Huang, ML; Kwo, J; Lee, WC; Chu, LK; Lin, TD; Chiang, TH; Wang, YC; Wu, YD; MINGHWEI HONG | Applied Physics Letters | | | |
2011 | InGaAs and Ge MOSFETs with high $κ$ dielectrics | Lee, WC; Chang, P; Lin, TD; Chu, LK; Chiu, HC; Kwo, J; MINGHWEI HONG | Microelectronic Engineering | | | |
2011 | Low interfacial trap density and sub-nm equivalent oxide thickness in In0. 53Ga0. 47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics | Chu, LK; Merckling, C; Alian, A; Dekoster, J; Kwo, J; MINGHWEI HONG ; Caymax, M; Heyns, Marc | Applied Physics Letters | | | |
2009 | Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y 2 O 3 on Ge | Chu, LK; Lee, WC; Huang, ML; Chang, YH; Tung, LT; Chang, CC; Lee, YJ; Kwo, J; MINGHWEI HONG | Journal of Crystal Growth | | | |
2009 | Metal-oxide-semiconductor devices with UHV-Ga 2 O 3 (Gd 2 O 3) on Ge (100) | Chu, LK; Lin, TD; Lee, CH; Tung, LT; Lee, WC; Chu, RL; Chang, CC; MINGHWEI HONG ; Kwo, J | International Symposium on VLSI Technology, Systems, and Applications, 2009 | | | |
2009 | Molecular beam epitaxy-grown Al 2 O 3/HfO 2 high-$κ$ dielectrics for germanium | Lee, WC; Chin, BH; Chu, LK; Lin, TD; Lee, YJ; Tung, LT; Lee, CH; MINGHWEI HONG ; Kwo, J | Journal of Crystal Growth | | | |
2008 | Si metal-oxide-semiconductor devices with high kappa HfO2 fabricated using a novel MBE template approach followed by atomic layer deposition | Pan, CH; Kwo, J; Lee, KY; Lee, WC; Chu, LK; Huang, ML; Lee, YJ; MINGHWEI HONG | Journal of Vacuum Science & Technology B | | | |