| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2004 | Package-strain-enhanced device and circuit performance | Maikap, S.; Liao, M.H. ; Yuan, F.; Lee, M.H.; Huang, C.-F.; Chang, S.T.; Liu, C.W. | International Electron Devices Meeting | 21 | | |
| 2017 | Performance enhancement for the triboelectric energy harvester by using interfacial micro-dome array structures | Liao, M.-H.; Huang, H.-Y.; Chuang, C.-C.; MING-HAN LIAO | Applied Physics Letters | 4 | 5 | |
| 2017 | Performance Enhancement for the Triboelectric Energy Harvester by using interfacial microdome array structures | M. H.Liao ; H.-I. Huang; C.-C. Chuang | Applied Physics Letters | | | |
| 2014 | Periodic nanostructured thin-film solar cells | Hsieh, C.-F.; Wu, H.-S.; Wu, T.-C.; Liao, M.-H. | Advanced Materials Research | 0 | 0 | |
| 2016 | PET imaging of serotonin transporters with 4-[ 18 F]-ADAM in a parkinsonian rat model with porcine neural xenografts | Chiu, C.-H.; Li, I.-H.; Weng, S.-J.; Huang, Y.-S.; Wu, S.-C.; Chou, T.-K.; Huang, W.-S.; Liao, M.-H. ; Shiue, C.-Y.; Cheng, C.-Y.; Ma, K.-H. | Cell Transplantation | 4 | 3 | |
| 2016 | Physical Thickness 1.x nm Ferroelectric HfZrOx Negative Capacitance FETs | M. H.Liao ; M. H. Lee; S.-T. Fan; C.-H. Tang; P.-G. Chen; Y.-C. Chou; H.-H. Chen; J.-Y.Kuo; M.-J. Xie; S.-N. Liu; C.-A. Jong; K.-S. Li; M.-C. Chen; C.W. Liu | International Electron Devices Meeting | | | |
| 2017 | Physical thickness 1.x nm ferroelectric HfZrOx negative capacitance FETs | Lee, M.H.; Fan, S.-T.; Tang, C.-H.; Chen, P.-G.; Chou, Y.-C.; Chen, H.-H.; Kuo, J.-Y.; Xie, M.-J.; Liu, S.-N.; Liao, M.-H. ; Jong, C.-A.; Li, K.-S.; Chen, M.-C.; Liu, C.W. | International Electron Devices Meeting | 49 | 0 | |
| 2018 | Planarization, Fabrication and Characterization of Three-dimensional Magnetic Field Sensors | M. H.Liao ; Van Su Luong; Yu-Hsin Su; Chih-Cheng Lu; Jen-Tzong Jeng; Jen-Hwa Hsu; Jong-Ching Wu; Meng-Huang Lai; Ching-Ray Chang | IEEE Transaction on Nanotech | | | |
| 2018 | Planarization, Fabrication, and Characterization of Three-Dimensional Magnetic Field Sensors | Luong, V.S.; Su, Y.-H.; Lu, C.-C.; Jeng, J.-T.; Hsu, J.-H.; Liao, M.-H. ; Wu, J.-C.; Lai, M.-H.; Chang, C.-R. | IEEE Transactions on Nanotechnology | 8 | 9 | |
| 2006 | The process and optoelectronic characterization of Ge-on-insulator | Lin, C.-H.; Yu, C.-Y.; Liao, M.H. ; Huang, C.-F.; Lee, C.-J.; Lee, C.-Y.; Liu, C.W. | ECS Transactions | 1 | 0 | |
| 2006 | Promising a-Si:H TFTs with high mechanical reliability for flexible display | Lee, M.H.; Ho, K.-Y.; Chen, P.-C.; Cheng, C.-C.; Chang, S.T.; Tang, M.; Liao, M.H. ; Yeh, Y.-H. | International Electron Devices Meeting | 11 | 0 | |
| 2015 | Prospects for ferroelectric HfZrOx FETs with experimentally CET=0.98nm, SS<inf>for</inf>=42mV/dec, SS<inf>rev</inf>=28mV/dec, switch-off <0.2V, and hysteresis-free strategies | Lee, M.H.; Chen, P.-G.; Liu, C.; Chu, K.-Y.; Cheng, C.-C.; Xie, M.-J.; Liu, S.-N.; Lee, J.-W.; Huang, S.-J.; Liao, M.-H. ; Tang, M.; Li, K.-S.; Chen, M.-C. | International Electron Devices Meeting | 50 | 0 | |
| 2015 | Prospects for Ferroelectric HfZrOx FETs with Experimentally CET=0.98nm,SSfor=42mV/dec, SSrev=28mV/dec, Switch-OFF | M. H.Liao ; M. H. Lee; P.-G. Chen; C. Liu; K-Y. Chu; C.-C. Cheng; M.-J. Xie; S.-N. Liu; J.-W. Lee; S.-J. Huang; M. Tang; K.-S. Li; M.-C. Chen | IEEE Electron Device Meeting | | | |
| 2015 | Publisher's note: "Optimization of dislocation edge stress effects for Si N-type metal-oxide-semiconductor field-effect transistors" [Jpn. J. Appl. Phys. 52, 04CC20 (2013)] | Liao, M.-H. ; Chen, C.-H.; Chang, L.-C.; Yang, C.; Yu, M.-A.; Liu, G.-H.; Kao, S.-C. | Japanese Journal of Applied Physics | 0 | 0 | |
| 2013 | The reduction of keep-out zone (?10×) by the optimized novel trench structures near the through silicon vias for the application in 3-dimensional integrated circuits | Liao, M.H.; MING-HAN LIAO | Journal of Applied Physics | 7 | 7 | |
| 2012 | The relaxation of intrinsic compressive stress in complementary metal-oxide-semiconductor transistors by additional N ion implantation treatment with atomic force microscope-Raman stress extraction | Liao, M-H; Chen, C-H; Chang, L-C; Yang, C.; Kao, S-C; LiaoMH ; ChenCH | Journal of Applied Physics | 13 | 7 |  |
| 2013 | Relaxation of Residual Stress in Bent GaN Film on Sapphire Substrate by Laser Treatment With an Optimized Surface Structure Design | M. H.Liao ; C. H. Chen; L.-C. Chang; S. C. Kao; M.-Y. Yu; G.-H. Liu; M.-C.Huang | IEEE Transaction on Electron Devices | | | |
| 2013 | Relaxation of residual stress in bent GaN film on sapphire substrate by laser treatment with an optimized surface structure design | Chen, C.H.; Liao, M.-H. ; Chang, L.C.; Kao, S.C.; Yu, M.-Y.; Liu, G.-H.; Huang, M.-C. | IEEE Transactions on Electron Devices | 0 | 0 | |
| 2013 | The relaxation of stress and reduction of KOZ by the special designed trench structure near the TSV for the application of 3-DICs | M. H.Liao ; M.-Y. Yu; G.-H. Liu; C.-H. Chen; C.-X. Hong | Asia-Pacific Radio Science Conference | | | |
| 2013 | Residual stress of curvature sapphire substrate with GaN film released by the application of trench structures | Liao, M.-H. ; Lee, J.-J.; Chen, C.-H.; Kao, S.-C.; Chen, K.-C.; Hsieh, C.-F. | International Journal of Automation and Smart Technology | 0 | 0 | |
