公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2013 | Photoluminescence characterization of GaAs/GaAs0.64P0.19Sb0.17/GaAs heterostructure | J. Y. Chen; B. H. Chen; Y. S. Huang; Y. C. Chin; H. S. Tsai; HAO-HSIUNG LIN | Journal of Luminescence | | | |
2005 | Photoluminescence characterization of mid-infrared InNxAs1-x/In0.53Ga0.47As/InP multi-quantum wells with various N contents | H. D. Sun; A. H. Clark; S. Calvez; M. D. Dawson; D. K. Shih; HAO-HSIUNG LIN | 17th Indium Phosphide and Related Materials | | | |
2005 | Photoluminescence characterization of midinfrared InNxAs1–x/In0.53Ga0.47As/InP multiquantum wells with various N contents | H. D. Sun; A. H. Clark; S. Calvez; M. D. Dawson; D. K. Shih; HAO-HSIUNG LIN | Applied Physics Letters | | 15 | |
2008 | Photoluminescence of InAs0.04P0.67Sb0.29 | Tsai, Gene; Wang, De-Lun; HAO-HSIUNG LIN | Journal of Applied Physics. | 6 | 7 | |
2009 | Photoluminescence of InAsSb/InAsPSb quantum well | C. J. Wu; G. Tsai; HAO-HSIUNG LIN | 2009 International electron devices and materials symposia | | | |
2005 | Photoluminescence properties of dilute nitride InNAs/InGaAs/InP multi-quantum wells for mid-infrared applications | Sun, H.D.; Clark, A.H.; Calvez, S.; Dawson, M.D.; Shih, D.K.; HAO-HSIUNG LIN | Conference Proceedings - International Conference on Indium Phosphide and Related Materials | | | |
2002 | Photoluminescence study of hydrogen passivation in InAs1-xN x/InGaAs single-quantum well on InP | Ke, Y.Y.; Ya, M.H.; Chen, Y.F.; Wang, J.S.; Lin, H.H.; HAO-HSIUNG LIN ; YANG-FANG CHEN | Applied Physics Letters | 8 | 7 | |
2008 | Photoluminescence study of InAsPSb epilayers grown on GaAs substrates | Y. C. Chou; G. Tsai; HAO-HSIUNG LIN | 2008 International electron devices and materials symposia | | | |
1997 | Photoluminescence study of the self-organized InAs/GaAs quantum dots grown by gas source molecular beam epitaxy | Chen, Ming-Chin; Lin, Hao-Hsiung | 1997 IEEE International Symposium on Compound Semiconductors | 0 | 0 | |
2006 | Photoluminescence study on GaAsSbN grown by gas source molecular beam epitaxy | T. Y. Chen; T. C. Ma; Y. T. Lin; HAO-HSIUNG LIN | International electron devices and materials symposia | | | |
2007 | Photoluminescence study on InAs0.04P0.665Sb0.295 quarternary alloy | G. Tsai; D. L. Wang; HAO-HSIUNG LIN | OPT2007 | | | |
2007 | Photoluminescence study on InAs0.04P0.665Sb0.295 quarternary ally | C. J. Wu; G. Tsai; HAO-HSIUNG LIN | OPT2007 | | | |
2007 | Photoluminescence study on InAsPSb grown by gas source molecular beam epitaxy | G. Tsai; D. L. Wang; HAO-HSIUNG LIN | 8th international conference on mid-infrared optoelectronics: materials and devices (MIOMD-8) | | | |
2005 | Photoluminescence study on InAsSb/InAs multiple quantum well grown by molecular epitaxy | P. W. Liu; G. Tsai; H. H. Lin; T. Krier; HAO-HSIUNG LIN | OPT2005 | | | |
1994 | Photoreflectance Characterization of an InAlAs/InGaAs Heterojunction Bipolar Transistor | Lin, Hao-Hsiung ; Chang, Chien-Cheng; Hsu, K. T.; Chen, Y. H.; Chen, K. L.; Chen, H. P.; ?��???:rp07554; ?��?? | Applied Physics Letters | | | |
1994 | Photoreflectance characterization of an InAlAs/InGaAs heterostructure bipolar transistor | Hsu, K.T.; Chen, Y.H.; Chen, K.L.; Chen, H.P.; Lin, H.H.; Jan, G.J.; HAO-HSIUNG LIN | Applied Physics Letters | | | |
1998 | Photoreflectance spectroscopy of strained-layer (111)B InGaAs/GaAs quantum well diodes | Chan, C.H.; Chen, Y.F.; Chen, M.C.; Lin, H.H.; Jan, G.J.; HAO-HSIUNG LIN ; YANG-FANG CHEN | Journal of Applied Physics | 9 | 9 | |
1997 | Photoreflectance study of barrier-width dependence of above-barrier states in GaAs-AlxGa1-xAs multiple quantum wells | YANG-FANG CHEN ; HAO-HSIUNG LIN | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1 | 1 | |
1994 | Photoreflectance Study of Surface Fermi Level in Molecular Beam Epitaxial Grown InAlAs Heterostructures | Hwang, J. S.; Tyan, S. L.; Chou, W. Y.; Lee, M. L.; Weybume, D.; Hang, Z.; Lee, T. L.; Lin, Hao-Hsiung | Applied Physics Letters | 18 | 18 | |
2004 | Photoreflectance study on the interface of InGaP/GaAs heterostructure grown by gas source molecular beam epitaxy | C. M. Lai; F. Y. Chang; G. J. Jan; HAO-HSIUNG LIN | Japanese Journal of Applied Physics | 0 | 0 | |