Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
1990 | P-Al0.2Ga0.8As/n-Al0.05Ga0.95As/Au Schottky Collector Heterojunction Bipolar Transistor with a Design of High Bandgap Extrinsic Base | Chen, M. C.; 林浩雄 ; Lin, Hao-Hsiung | 1990 International Electron Devices and Materials Symposium | | | |
1994 | P-N Double Quantum Well Resonant Interband Tunneling Diode with Peak-to-Valley Current Ratio of 144 at Room Temperature | Tsai, H.H.; Su, Y.K.; Wang, R.L.; Lin, H.H.; Lee, T.L.; HAO-HSIUNG LIN | IEEE Electron Device Letters | | | |
2017 | Partially polycrystalline GaN1-xAsx alloys grown on GaAs in the middle composition range achieving a smaller band gap | Wu, H.-M.; Lin, K.-I.; Liu, Y.-X.; Cheng, Y.-C.; HAO-HSIUNG LIN | Japanese Journal of Applied Physics | 1 | 1 | |
2003 | PDIC 用光偵測器之量測、模擬與製程最佳化 | 林浩雄 | | | | |
2005 | Performance evaluation of field-enhanced p-channel split-gate flash memory | W. T. Chu; Y. H. Wang; C. T. Hsieh; Y. T. Lin; C. S. Wang; HAO-HSIUNG LIN | IEEE Electron Device Letters | 2 | 2 | |
- | Phonon characteristics of Si-doped InAs grown by gas-source molecular beam epitaxy | Talwar, Devki N.; Lin, Hao-Hsiung; Feng, Zhe Chuan; HAO-HSIUNG LIN | Journal of Raman Spectroscopy | | | |
1998 | Photoconductivity in self-organized InAs quantum dots | Fan, J.C.; Lin, Y.J.; Chen, Y.F.; Chen, M.C.; HAO-HSIUNG LIN ; YANG-FANG CHEN | Journal of Applied Physics | 7 | 7 | |
2006 | Photoluminescence and bowing parameters of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy | P. W. Liu; G. Tsai; A. Krier; Q. D. Zhuang; M. Stone; HAO-HSIUNG LIN | Applied Physics Letters | 13 | 16 | |
2007 | Photoluminescence and modulation spectroscopy study of the effects of growth interruptions on the interfaces of GaAsSb/GaAs multiple quantum wells | H. P. Hsu; P. Sitarek; Y. S. Huang; P. W. Liu; H. H. Lin; K. K. Tiong; HAO-HSIUNG LIN | physica status solidi (a) | | 2 | |
2008 | Photoluminescence and photoreflectance study of annealing effects on GaAs0.909Sb0.07N0.021 layer grown by gas-source molecular beam epitaxy | Hsu, Hung-Pin; Huang, Yen-Neng; Huang, Ying-Sheng; Lin, Yang-Ting; Ma, Ta-Chun; Tiong, Kwong-Kau; Sitarek, Piotr; Misiewicz, Jan; HAO-HSIUNG LIN | Journal of Applied Physics. | 4 | 2 | |
2014 | Photoluminescence and Raman scattering of degenerate InN | F. W. Pranoto; C. Y. Tsai; Y. C. Liao; L. C. Chen; K. H. Chen; H. H. Lin; Z. C. Feng; HAO-HSIUNG LIN | OPTIC 2014, optics and photonics Taiwan, international conference 2014 | | | |
2013 | Photoluminescence characterization of GaAs/GaAs0.64P0.19Sb0.17/GaAs heterostructure | J. Y. Chen; B. H. Chen; Y. S. Huang; Y. C. Chin; H. S. Tsai; HAO-HSIUNG LIN | Journal of Luminescence | | | |
2005 | Photoluminescence characterization of mid-infrared InNxAs1-x/In0.53Ga0.47As/InP multi-quantum wells with various N contents | H. D. Sun; A. H. Clark; S. Calvez; M. D. Dawson; D. K. Shih; HAO-HSIUNG LIN | 17th Indium Phosphide and Related Materials | | | |
2005 | Photoluminescence characterization of midinfrared InNxAs1–x/In0.53Ga0.47As/InP multiquantum wells with various N contents | H. D. Sun; A. H. Clark; S. Calvez; M. D. Dawson; D. K. Shih; HAO-HSIUNG LIN | Applied Physics Letters | | 15 | |
2008 | Photoluminescence of InAs0.04P0.67Sb0.29 | Tsai, Gene; Wang, De-Lun; HAO-HSIUNG LIN | Journal of Applied Physics. | 6 | 7 | |
2009 | Photoluminescence of InAsSb/InAsPSb quantum well | C. J. Wu; G. Tsai; HAO-HSIUNG LIN | 2009 International electron devices and materials symposia | | | |
2005 | Photoluminescence properties of dilute nitride InNAs/InGaAs/InP multi-quantum wells for mid-infrared applications | Sun, H.D.; Clark, A.H.; Calvez, S.; Dawson, M.D.; Shih, D.K.; HAO-HSIUNG LIN | Conference Proceedings - International Conference on Indium Phosphide and Related Materials | | | |
2002 | Photoluminescence study of hydrogen passivation in InAs1-xN x/InGaAs single-quantum well on InP | Ke, Y.Y.; Ya, M.H.; Chen, Y.F.; Wang, J.S.; Lin, H.H.; HAO-HSIUNG LIN ; YANG-FANG CHEN | Applied Physics Letters | 8 | 7 | |
2008 | Photoluminescence study of InAsPSb epilayers grown on GaAs substrates | Y. C. Chou; G. Tsai; HAO-HSIUNG LIN | 2008 International electron devices and materials symposia | | | |
1997 | Photoluminescence study of the self-organized InAs/GaAs quantum dots grown by gas source molecular beam epitaxy | Chen, Ming-Chin; Lin, Hao-Hsiung | 1997 IEEE International Symposium on Compound Semiconductors | 0 | 0 | |