公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2016 | MOS Devices with UltraHigh Dielectric Constants and Methods of Forming the Same | M.H.Liao ; M.Hongh | | | | |
2021 | Multi-ferroic properties on bifeo3/batio3 multi-layer thin-film structures with the strong magneto-electric effect for the application of magneto-electric devices | Hu C.-W; Yen C.-M; Feng Y.-C; Chen L.-H; Liao B.-Z; Chen S.-C; Liao M.-H.; MING-HAN LIAO | Coatings | | | |
2022 | Multi-Layer Chips on Wafer Stacking Technologies with Carbon Nano-Tubes as Through-Silicon Vias and it's potential applications for Power-Via technologies | Liao, Bo Zhou; Chen, Liang Hsi; Chen, Kai Cheng; Lin, Hong Yi; Tsai, Yi Ting; Chen, Ting Wei; Chan, Yi Cheng; Lee, Min Hung; MING-HAN LIAO | Proceedings - Electronic Components and Technology Conference | 3 | 0 | |
2012 | Nano-textured photonic crystal light-emitting diodes and solar cells | M.-H. Liao; C.-H. Chen; L.-C. Chang; C. Yang; S.-C. Kao; C.-F. Hsieh; MING-HAN LIAO | 2012 International Conference on Solid State Devices and Materials (SSDM) | | | |
2016 | Narrow channel width effect modificati on in a shallow trench isolation device | M. H.Liao ; T.L. Lee | | | | |
2017 | Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide | MING-HAN LIAO ; CHEE-WEE LIU | 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017 | 4 | 0 | |
2022 | Negative Schottky barrier height and surface inhomogeneity in n-silicon M-I-S structures | Harisha, C. P.; MING-HAN LIAO ; Kei, C. C.; Joshi, S. | AIP Advances | 1 | 0 | |
2015 | A non-linear analytic stress model for the analysis on the stress interaction between TSVs | Liao, M.-H. ; Kao, S.-C.; Huang, S.-J. | International Journal of Automation and Smart Technology | 0 | 0 | |
2019 | Non-Volatile Ferroelectric FETs Using 5-nm Hf<inf>0.5</inf>Zr<inf>0.5</inf>O<inf>2</inf> with High Data Retention and Read Endurance for 1T Memory Applications | Chen, K.-T.; Chen, H.-Y.; Liao, C.-Y.; Siang, G.-Y.; Lo, C.; Liao, M.-H.; Li, K.-S.; Chang, S.T.; Lee, M.H.; MING-HAN LIAO | IEEE Electron Device Letters | | | |
2019 | Non-Volatile Ferroelectric FETs Using 5-nm HfZrO with High Data Retention and Read Endurance for 1T Memory Applications | K.-T. Chen; H.-Y. Chen; C.-Y. Liao; G.-Y. Siang; C. Lo; M.-H. Liao; K.-S. Li; S. T. Chang; M.-H. Lee; MING-HAN LIAO | IEEE Electron Device Letters | | | |
2013 | Nonlinear analytic model for the strain field induced by thermal copper filled TSVs | M. H.Liao ; C.-H. Chen; J.-J. Lee; K.-C. Chen; J.-H. Liang | e-Manufacturing & Design Collaboration Symposium | | | |
2013 | The novel chamber hardware design to improve the thin film deposition quality in both 12 <sup>?</sup> (300 mm) and 18 <sup>?</sup> (450 mm) wafers with the development of 3D full chamber modeling and experimental visual technique | Liao, M.-H.; Chen, C.-H.; MING-HAN LIAO | AIP Advances | | | |
2013 | The novel chamber hardware design to improve the thin film deposition quality in both 12? (300 mm) and 18? (450 mm) wafers with the development of 3D full chamber modeling and experimental visual technique | Liao, M.-H. ; Chen, C.-H.; Kao, S.-C. | International Journal of Heat and Mass Transfer | 1 | 1 | |
2005 | Novel schottky barrier strained germanium PMOS | Peng, C.-Y.; Yuan, F.; Lee, M.H.; Yu, C.-Y.; Maikap, S.; Liao, M.H. ; Chang, S.T.; Liu, C.W. | 2005 International Semiconductor Device Research Symposium | 2 | | |
2012 | A novel stress design for the type-II hetero-junction solar cell with superior performance | Liao, M.-H.; Chen, C.-H.; Chang, L.-C.; Yang, C.; LiaoMH ; ChenCH | Journal of Applied Physics | 6 | 4 | |
2012 | A Novel Stress Design for the Type-II Hetero-Junction Solar Cell with Superior Performance | M.-H. Liao; MING-HAN LIAO | The 6th International Conference on Technological Advances of Thin Films & Surface Coatings | | | |
2012 | A Novel Surface Nano-Structure Design for SiGe/Si Type-II Hetero-Junction Solar Cell | M.-H. Liao; C.-H. Chen; L.-C. Chang; C. Yang; S.-C. Kao; C.-F. Hsieh; MING-HAN LIAO | 2012 International Conference on Solid State Devices and Materials (SSDM) | | | |
2012 | A novel technique to fabricate 28 nm p-MOSFETs possessing gate oxide integrity on an embedded SiGe channel without silicon surface passivation | M. H.Liao ; M. H. Yu; T. C. Huang; L. T. Wang; T. L. Lee; S. M. Jang; H. C.Cheng | Journal of Physics D: Applied Physics | | | |
2012 | Optimal Si-SiGe hetero-structure thin-film solar cell with theoretical calculation and quantitative analysis | M.-H. Liao; C.-H. Chen; L.-C. Chang; C. Yang; S.-C. Kao; C.-F. Hsieh; MING-HAN LIAO | 2012 International Conference on Solid State Devices and Materials (SSDM) | | | |
2008 | Optimal stress design in p-MOSFET with superior performance | Liao, M.H.; MING-HAN LIAO | IEEE Transactions on Electron Devices | | | |